Journal ArticleDOI
Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage
TLDR
In this article, the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature, where capacitance/conductance-voltage frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (± 3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters.Abstract:
In this study, Al/Al2O3/p-Si (MIS) type structures were fabricated and then the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature. For this purpose, capacitance/conductance-voltage-frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (±3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters. Experimental results indicate that C and G/ω values are strong function of frequency and voltage particularly in the regions of accumulation and depletion. Calculating from the interception and slope of C−2-V plot, the doping acceptor atoms (NA), BH and depletion layer width (WD) were obtained for each frequency, respectively. Both BH and WD values exponentially increase by frequency increment. Nicollian-Brews method were used to extract voltage dependence profiles of Rs and frequency from C and G data.read more
Citations
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Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures
TL;DR: In this paper, the real and imaginary components of the complex dielectric, complex electric modulus, and electrical conductivity were investigated for fabricated Al/(5% graphene (Gr)-PVA)/p-Si (metal-polymer-semiconductor (MPS)) type structures in wide frequency (5-kHz-5-MHz) and voltage (±4-V) ranges by using impedance measurements.
Journal ArticleDOI
Electrical and dielectric properties of Al/(PVP: Zn-TeO 2 )/p-Si heterojunction structures using current-voltage (I-V) and impedance-frequency (Z-f) measurements
Yashar Azizian-Kalandaragh,Javid Farazin,Şemsettin Altındal,Mehdi Shahedi Asl,Gholamreza Pirgholi-Givi,Seyed Ali Delbari,Abbas Sabahi Namini +6 more
TL;DR: In this article, the influence of (PVP: Zn-TeO2) interphase layer on the electrophysical parameters was investigated by I-V and Z-f measurements.
Journal ArticleDOI
Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures
TL;DR: In this article, an ultrasonic-assisted method was used for fabrication of ZnFe2O4-PVP/n-Si MPS structures for the purpose of characterizing electrical and dielectric properties via impedance-spectroscopy-method (ISM) between -2-V and 5-V in the frequency range of 10-kHz-5MHz.
Journal ArticleDOI
Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO 4 -PVP Interfacial Layer
TL;DR: In this paper, a film of cobalt sulfate (CoSO4)-doped polyvinylpyrrolidone (PVP) blend was spin-coated on n-Si.
Journal ArticleDOI
Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes
TL;DR: In this paper, the admittance measurements of the fabricated Au/(%1Ni-PVA)/n-Si (MPS) structure were performed within the frequency range of 5 kHz-5 MHz and voltage range of ± 3 ǫ with 50 mV steps.
References
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Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
H C Card,E H Rhoderick +1 more
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
TL;DR: In this article, the authors demonstrate that the surface passivation of Al2O3 can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density.