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Journal ArticleDOI

GaAs rib-waveguide directional-coupler switch with Schottky barriers

Hitoshi Kawaguchi
- 22 Jun 1978 - 
- Vol. 14, Iss: 13, pp 387-388
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TLDR
In this article, a new type of GaAs electro-optic directional-coupler switch for monolithic integrated optics has been proposed and demonstrated using a pair of closely spaced low-loss (α ≈ 22 dB/cm at 115 μm) single-mode rib waveguides with Au Schottky barriers.
Abstract
A new type of GaAs electro-optic directional-coupler switch for monolithic integrated optics has been proposed and demonstrated The devices were fabricated from a pair of closely spaced low-loss (α ≈ 22 dB/cm at 115 μm) single-mode rib waveguides with Au Schottky barriers A 30 dB extinction ratio in the input channel was measured at a reverse-bias voltage of 24 V and the switches have a potential bandwidth of 2 GHz

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Journal ArticleDOI

Low-loss III-V semiconductor optical waveguides

TL;DR: In this paper, a review of recent progress in low-loss III-V integrated optics for the 1-1.6 mu m wavelength range, including propagation, bending, coupling, and modulator losses, is presented.
Journal ArticleDOI

Directional coupler switches, modulators, and filters using alternating Δβ techniques (Invited Paper)

TL;DR: The principles of operation and current status of single-mode optical directional coupler switches, modulators, and filters using \Delta \beta reversal techniques are reviewed in this paper, where the same authors also present a review of the current state of the optical coupler switch design.
Journal ArticleDOI

Low‐loss GaAs/AlGaAs waveguide phase modulator using a W‐shaped index profile

TL;DR: In this paper, a low-loss semiconductor optical waveguide phase modulator for the 1.5 μm wavelength region was demonstrated. But the authors did not specify the epilayer structure of the waveguide.
Journal ArticleDOI

GaAs homojunction rib waveguide directional coupler switch

TL;DR: In this article, an electro-optic directional coupler switch with a GaAs homojunction structure and tested at 1.15 μm was fabricated and tested on a 6.3mm-long device.
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