GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition

TLDR: In this article, a tetrahedral quantum dot (TQD) was proposed to make a zero-dimensional electron-hole system, where the TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates.

Abstract: New GaAs quantum dot structures, called tetrahedral quantum dots (TQDs), are proposed to make a zero‐dimensional electron‐hole system. The TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates. The calculated energy sublevel structures of zero‐dimensional electrons in a GaAs TQD show large quantum size effects, because electrons are confined three dimensionally. GaAs and AlGaAs tetrahedral facet structures on (111)B GaAs substrates partially etched into a triangular shape were grown using MOCVD. Tetrahedral growth with {110} facets occurs in the triangular areas. The cathodoluminescence intensity map for GaAs tetrahedrons buried in AlGaAs shows the tetrahedral dot array.