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Journal ArticleDOI

Multidimensional quantum well laser and temperature dependence of its threshold current

Yasuhiko Arakawa, +1 more
- 01 Jun 1982 - 
- Vol. 40, Iss: 11, pp 939-941
TLDR
In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
Abstract
A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.

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Citations
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Journal ArticleDOI

Optical gain and stimulated emission in nanocrystal quantum dots.

TL;DR: In this article, the authors examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots.
Journal Article

Optical gain and stimulated emission in nanocrystal quantum dots

TL;DR: This work examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots.
Journal ArticleDOI

Engineering atomic and molecular nanostructures at surfaces

TL;DR: This work presents an autonomous ordering and assembly of atoms and molecules on atomically well-defined surfaces that combines ease of fabrication with exquisite control over the shape, composition and mesoscale organization of the surface structures formed.
Journal ArticleDOI

Infrared detectors: status and trends

TL;DR: In this article, the performance of infrared thermal detectors as compared to photon detectors is investigated and an overview of focal plane array architecture is given with emphasis on monolithic and hybrid structures.
Journal ArticleDOI

Gain and the threshold of three-dimensional quantum-box lasers

TL;DR: In this article, the electronic dipole moment and its polarization dependence are analyzed, and it is shown that the gain becomes maximum when the electric field of light is parallel to the longest side of the quantum box.
References
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Journal ArticleDOI

Spontaneous and Stimulated Recombination Radiation in Semiconductors

Gordon J Lasher, +1 more
- 20 Jan 1964 - 
TL;DR: In this article, the spectral line shapes of the radiation produced by band-to-band recombination of excess carriers in semi-conductors are calculated under the assumption that the momentum matrix element is the same for all initial and final states, i.e., that there is no momentum selection rule.
Journal ArticleDOI

Quantum-well heterostructure lasers

TL;DR: In this paper, the steplike density-of-states of a quantum-well heterostructure can improve the operation of a semiconductor laser, which is explained in terms of the step-like density of states and the disturbed electron and phonon distributions in the quantumwell active regions.
Journal ArticleDOI

Some Magnetic Properties of Metals. II. The Influence of Collisions on the Magnetic Behaviour of Large Systems

TL;DR: In this article, the effect of collisions on magnetic properties of a large system of free electrons has been discussed, and it is shown that the non-periodic term in the susceptibility is hardly affected, but that the periodic terms are reduced in magnitude by a factor exp (- hp /βH ), where p is the harmonic considered, ┬ is the mean collision time, and β = eh /2π mc.
Journal ArticleDOI

Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

TL;DR: In this paper, the threshold current density of quantum-well AlxGa1−xAs−GaAs heterostructure laser diodes, grown by MO•CVD, is shown to be less temperature dependent than that of conventional DH lasers.
Journal ArticleDOI

Temperature dependence of threshold current for a quantum-well heterostructure laser

TL;DR: In this paper, the threshold current density of a quantum-well laser diode is calculated taking into account the quasi-two-dimensional nature of the heterostructure and the step-like densities of states and the perturbed (hot) carrier distribution of a quasiprocessor.
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