Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
TLDR
In this paper, the fabrication of GaAs hexagonal nanowires surrounded by vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth was described.Abstract:
We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9μm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed.read more
Citations
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Nanowire-based one-dimensional electronics
Claes Thelander,Prabhat Agarwal,S. Brongersma,Joël Eymery,L.F. Feiner,Alfred Forchel,Marc Scheffler,Walter Riess,B. J. Ohlsson,Ulrich Gösele,Lars Samuelson +10 more
TL;DR: In this article, the self-assembly of one-dimensional semiconductor nanowires is used to bring new, high-performance nanowire devices as an add-on to mainstream Si technology.
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Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D. Spirkoska,Jordi Arbiol,Anders Gustafsson,Sonia Conesa-Boj,Frank Glas,Ilaria Zardo,Matthias Heigoldt,Mhairi Gass,A Bleloch,Sònia Estradé,Michael Kaniber,J. Rossler,Francesca Peiró,Joan Ramon Morante,Gerhard Abstreiter,Lars Samuelson,A. Fontcuberta i Morral,A. Fontcuberta i Morral +17 more
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Journal ArticleDOI
Synthesis and applications of one-dimensional semiconductors
Sven Barth,Sven Barth,Francisco Hernandez-Ramirez,Justin D. Holmes,Justin D. Holmes,Albert Romano-Rodriguez +5 more
TL;DR: In this paper, a review of synthetic approaches for growing high aspect-ratio semiconductors from bottom-up techniques, such as crystal structure governed nucleation, metal-promoted vapour phase and solution growth, formation in non-metal seeded gas-phase processes, structure directing templates and electrospinning, is presented.
Journal ArticleDOI
Control of InAs Nanowire Growth Directions on Si
TL;DR: To integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature is achieved.
Patent
Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
Anthony J. Lochtefeld,Matthew T. Currie,Zhiyuan Cheng,James Fiorenza,G. Braithwaite,T. A. Langdo +5 more
TL;DR: In this paper, the fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations is discussed.
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