Journal ArticleDOI
Gap states density in a-Si:H deduced from subgap optical absorption measurement on Schottky solar cells
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TLDR
In this paper, the spectral dependence of the optical absorption coefficient is measured by a constant photocurrent method (CPM) on forward-biased Schottky diodes, and the spectral properties of reflection on the semitransparent Pt electrode are determined.Abstract:
The density of states in amorphous hydrogenated silicon is obtained by deconvolution of the optical absorption coefficient a in the full sub band-gap region. The spectral dependence of the optical absorption coefficient is measured by a constant photocurrent method (CPM) on forward-biased Schottky diodes. The spectral dependence of reflection on the semitransparent Pt electrode is determined. All assumptions used in the deconvolution of a are discussed. The difference in measured value of a (by CPM) in the region below approximately 0.9 eV compared to the measurement of α by photothermal deflection spectroscopy (PDS) is explained by an absorption process seen in PDS and not seen in CPM. This absorption is supposed to be a transition from a deep localized state to a deep localized gap state (two different charge states of the same defect).
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Citations
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Journal ArticleDOI
How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:H
TL;DR: In this paper, the measurement of the absorption coefficient at E = 1.2 eV, with a new range for the calibration factor, is suggested as an easy and generally usable procedure for the determination of deep defect density.
Journal ArticleDOI
Suppression of interference fringes in absorption measurements on thin films
Dan Ritter,K. Weiser +1 more
TL;DR: In this article, it was shown that the absorptance of thin films is nearly proportional to their transmittance, and that their ratio is virtually free of interference fringes, and can be used accurately to obtain the absorption coefficient of the film.
Journal ArticleDOI
Electron and hole transport in a‐Si1−xGex:H alloys
TL;DR: In this paper, it was shown that only the conduction-band tail is widened by the incorporation of GeH4/GeH4 mixtures in a triode glow-discharge reactor.
Journal ArticleDOI
Schottky-barrier solar cell based on layered semiconductor tungsten disulfide nanofilm
TL;DR: In this article, a Schottky-barrier solar cell using layer-structured semiconductor tungsten disulfide (WS2) nanofilm (NF) as the photo-active material was demonstrated.
Journal ArticleDOI
a-Si:H gap states investigated by CPM and SCLC
J. Kočka,M. Vanecek,F. Schauer +2 more
TL;DR: In this article, the density of states (DOS) in the mobility gap of a-Si:H is briefly reviewed and the experimental data on subgap optical absorption, derived by CPM and TM-SCLC results are analyzed and the DOS is obtained by deconvolution.
References
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Journal ArticleDOI
Direct measurement of gap state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
Warren B. Jackson,Nabil M. Amer +1 more
TL;DR: In this paper, the authors measured the subgap otpical absorption of undoped, singly doped, and compensated hydrogenated amorphous silicon down to 0.6 eV using the sensitive technique of photothermal deflection spectroscopy.
Journal ArticleDOI
Evidence for Exponential Band Tails in Amorphous Silicon Hydride
TL;DR: In this article, the conduction and valence-band width of amorphous silicon hydride is inferred from time-of-flight measurements of the temperature dependence of the electron and hole drift mobilities, and a multiple-trapping model of dispersive transport.
Journal ArticleDOI
Density of the gap states in undoped and doped glow discharge a-Si:H
TL;DR: In this article, the density of gap states in undoped and phosphorus and antimony doped a-Si:H has been determined from the absorption coefficient measurement using a constant photocurrent method to determine the value of optical absorption in the low absorption region.
Journal ArticleDOI
Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous silicon
TL;DR: In this paper, a direct way to obtain the spectra dependence of the optical absorption coefficient in the low-absorption region (10−1−103cm−1) on thin amorphous silicon films is presented.
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Direct measurement of gap state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
Warren B. Jackson,Nabil M. Amer +1 more