Journal ArticleDOI
Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
Chenming Hu,YewChung Sermon Wu +1 more
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In this article, the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask, and α-Si was coated on the top of contact holes as Ni-gettering layer.Abstract:
Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance In this study, α-Si film was coated on the top of contact holes as Ni-gettering layer It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition maskread more
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Patent
Method of fabricating thin film transistor
Chien-Sheng Yang,Fang-Chen Luo +1 more
TL;DR: In this article, a method of fabricating a thin-film transistor is described, in which, in order to control the concentration of metal catalysts remaining on a polycrystalline silicon layer, a very small amount of metal catalyst is adsorbed or diffused into a capping layer, and then a crystallization process is carried out, thereby minimizing the concentration.
Patent
Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
TL;DR: In this article, a thin film transistor is defined as a substrate, a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having the first impurity formed at edges of the source or drain regions.
Patent
Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
TL;DR: In this paper, a thin-film transistor with a channel region, source and drain regions, and a body contact region is described, where the channel region is formed in an edge region of the semiconductor layer.
Patent
Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor
TL;DR: In this paper, a thin-film transistor (TFT) is defined as an organic light emitting diode (OLED) display device having the TFT, which includes a substrate, a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallizationinducing metal, first gettering sites disposed on opposing edges of the semiconductor layers, and a second gettering site spaced apart from the first gettingtering sites.
Journal ArticleDOI
Polycrystalline silicon thin films prepared by Ni silicide induced crystallization and the dopant effects on the crystallization
TL;DR: In this article, the Ni silicide seeds induced crystallization was applied to polycrystalline silicon thin films and a reasonable explanation for the dopant effects on the growth rate, microstructure and electronic properties of the samples was presented.
References
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Journal ArticleDOI
Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization
Seok-Woon Lee,Seung-Ki Joo +1 more
TL;DR: In this paper, a low temperature crystallization method for poly-Si TFTs was developed: Metal-Induced Lateral Crystallization (MILC), where the a-Si film in the channel area was laterally crystallized from the source/drain area, on which an ultrathin nickel layer was deposited before annealing.
Journal ArticleDOI
Polysilicon TFT technology for active matrix OLED displays
TL;DR: In this paper, the integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness.
Journal ArticleDOI
High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications
TL;DR: In this paper, a metal-induced-unilateral crystallization (MIUC) was proposed to remove from the edges of and within the channel region all major grain boundaries transverse to the drain current flow.
Journal ArticleDOI
An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistors
TL;DR: In this paper, a very low shot laser process was applied to thin-film transistors (TFTs) made from a new hybrid process in which amorphous silicon (a-Si) is first converted to polycrystalline silicon (poly-Si), and then improved using excimer laser annealing (laser MILC or L-MILC).
Journal ArticleDOI
Effects of longitudinal grain boundaries on the performance of MILC-TFTs
TL;DR: In this article, metal induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance at reduced processing temperature compared to conventional solid phase crystallized thin-film transistors (TFTs).