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Growth and Raman scattering characterization of Cu2ZnSnS4 thin films

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TLDR
In this article, the growth, morphological and structural characterization of CZTS thin films prepared by sulfurization of DC magnetron sputtered Cu/Zn/Sn precursor layers were reported.
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This article is published in Thin Solid Films.The article was published on 2009-02-02 and is currently open access. It has received 485 citations till now. The article focuses on the topics: CZTS & Kesterite.

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Citations
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The path towards a high-performance solution-processed kesterite solar cell ☆

TL;DR: In this article, the development of kesterite-based Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin-film solar cells, in which the indium and gallium from CIGSSe are replaced by the readily available elements zinc and tin, is reviewed.
Journal ArticleDOI

Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber

TL;DR: In this paper, a vacuum process was used to construct a pure sulfide Cu2ZnSnS4 solar cell with 8.4% efficiency, a number independently certified by an external, accredited laboratory.
Journal ArticleDOI

Fabrication of 7.2% Efficient CZTSSe Solar Cells Using CZTS Nanocrystals

TL;DR: By tuning the composition of the CZTS nanocrystals and developing a robust film coating method, a total area efficiency as high as 7.2% under AM 1.5 illumination and light soaking has been achieved.
Journal ArticleDOI

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

TL;DR: In this article, the results of the characterization by XRD, electron backscatter diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase.
Journal ArticleDOI

A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors

TL;DR: In this paper, thin films of Cu2SnS3 and Cu3SnS4 were grown by sulfurization of dc magnetron sputtered Sn-Cu metallic precursors in a S2 atmosphere.
References
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Journal ArticleDOI

Physical properties of ZnO:F obtained from a fresh and aged solution of zinc acetate and zinc acetylacetonate

TL;DR: In this paper, the effect of the zinc precursor type, the aging of the starting solution, the substrate temperature and a vacuum-annealing treatment on the electrical, morphological, structural and optical properties was studied, in order to obtain conductive and transparent zinc oxide thin films.
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Fabrication and characterization of Cu2ZnSnS4 thin films deposited by spray pyrolysis technique

TL;DR: In this paper, the authors investigated synthesis conditions and some properties of sprayed Cu 2 ZnSnS 4 (CZTS) thin films in order to determine the best preparation conditions for the realization of CZTS based photovoltaic solar cells.
Journal ArticleDOI

Cu2Zn1–xCdx Sn(Se1–ySy)4 solid solutions as absorber materials for solar cells

TL;DR: In this paper, the authors used a small fraction of grown powders as absorber materials in monograin layer (MGL) solar cell structures: graphite/Cu 2 Zn 1-x Cd x Sn(Se 1-y S y ) 4 /CdS/ZnO.
Journal ArticleDOI

Sprayed films of stannite Cu2ZnSnS4

TL;DR: In this article, a stoichiometric Cu2ZnSnS4 film with the stannite structure and resistivity of 2 × 10 2 Ω · cm has been prepared by annealing polycrystalline quaternary films at 550°C, which are spray-deposited on glass substrates, in an argon gas flow containing H2S.
Journal ArticleDOI

Fabrication of Cu2ZnSnS4 thin films by co-evaporation

TL;DR: In this article, the X-ray diffraction patterns revealed that CZTS thin films have a kesterite structure with a strong preferred orientation, and the grain size becomes larger with increasing the substrate temperature.
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Q1. What contributions have the authors mentioned in the paper "Growth and raman scattering characterization of cu2znsns4 thin films" ?

In the present work the authors report the results of the growth, morphological and structural characterization of Cu2ZnSnS4 ( CZTS ) thin films prepared by sulfurization of DC magnetron sputtered Cu/Zn/Sn precursor layers. Its properties were studied by SEM/EDS, XRD and Raman scattering. The influence of the sulfurization temperature on the morphology, composition and structure of the films has been studied. 

The spectra of both zones exhibit a shoulder at 255 cm-1, which is believed to be the convolution of peaks corresponding to Sn2S3, CZTS, Cu2-xS and ZnS [11-15]. 

Since there is almost no cubic ZnS Raman peak and the only published data of Raman is for monograins not for thin films the authors have associated the 338cm-1 peak to CZTS [15]. 

Non vacuum methods have also been developed, namely sulfurization of sol-gel deposited precursors by K. Tanaka et al. and spray-pyrolysis by N. Nakayama et al. and N. Kamoun et al. [7 - 9]. 

The sample preparation process begins with the substrate cleaning, a 9 cm2 SLG, withsuccessive ultrasound baths of acetone/alcohol/deionised water. 

The SEM/EDS systemsused were a SEM Hitachi S4100 and a Rontec EDS with setting parameters of 25 KeV and 10 µA forsurface imaging and a Hitachi SU-70 with a Quantax Bruker AXS EDS system with 15/25 KeV and 40µA for cross-section imaging. 

The EDS analysis showed that all samples had an excess of Sn and an average concentration ratio of 0.87 and 0.40 for [Cu]/([Zn]+[Sn]) and [Zn]/[Sn], respectively. 

In both samples, XRD analysis detected elemental Zn. For S425 the Raman scattering analysis shows major peaks, at 264 cm-1, 304 cm-1 and 356 cm-1 corresponding to Cu2-xS [12], Sn2S3 [11] and cubic ZnS [13], respectively. 

Further research must be carried out to optimize the film quality, to produce a more compact layer and to improve the adhesion of the absorber layer to the back-contact. 

It can be observed a void or cavity between the CZTS and the Mo layer whichcould be created either during the film growth or during the cutting process. 

The elimination of Cu2-xS phases may be performed using a more accurate composition control of the metallic precursors and/or a chemical surface treatment with KCN. 

Despite that, these still use rare and expensive materials like In, Ga and Te, they also use toxic elements like Cd and Se, which represent a disadvantage. 

The deposition conditions followed the recipe developed by J. Scofield et al. to ensure both low resistivity and good adhesion to the SLG [10].