Growth of high purity semiconductor epitaxial layers by liquid phase epitaxy and their characterization
TLDR
In this article, the authors describe the growth of several III-V epitaxial semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique and the step-by-step procedures adopted to reduce impurities.Abstract:
This paper briefly describes our work and the results on the growth of several III-V epitaxial semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such growth are listed and step-by-step procedures adopted to reduce them are discussed in particular reference to the growth of GaAs layers. The technique of growing very high purity layers by treating the melt with erbium is described for the growth of InGaAs and GaSb layers.read more
Citations
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Book ChapterDOI
Epitaxial Crystal Growth: Methods and Materials
TL;DR: In this article, three basic techniques, liquid phase epitaxy (LPE), metal organic chemical vapor deposition (MOCVD), and molecular beam epitaxial (MBE), are discussed.
Book ChapterDOI
Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy
TL;DR: In this paper, the authors proposed the use of rare-earth (RE) elements in semiconductor technology and applied it in the field of optical amplifiers and laser based on REdoped fibres for optoelectronics.
Journal ArticleDOI
Influence of cooling rate on the liquid-phase epitaxial growth of Zn3P2
S. Sudhakar,Krishnan Baskar +1 more
TL;DR: In this article, the liquid phase epitaxial growth of Zn 3 P 2 on InP (1.0) substrates by conventional horizontal sliding boat system using 100% In solvent was reported.
Journal ArticleDOI
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers
Jan Grym,Roman Yatskiv +1 more
TL;DR: In this paper, the Schottky barrier is constructed on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts using metal nanoparticles and a graphite layer.
Journal ArticleDOI
Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization
TL;DR: In this article, Zn3As2 epitaxial layers were grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) using Ga as the solvent.
References
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Journal ArticleDOI
Incorporation of erbium in GaAs by liquid-phase epitaxy
F. Bantien,E. Bauser,J. Weber +2 more
TL;DR: In this paper, the incorporation of the lanthanide element erbium in GaAs during growth by liquid phase epitaxy is investigated by low-temperature photoluminescence measurements.
Journal ArticleDOI
Liquid phase epitaxial growth of InGaAs on InP using rare‐earth‐treated melts
TL;DR: In this paper, epilayers were grown on semi-insulating (100) Fe-doped InP substrates using liquid phase epitaxy (LPE) using rare-earth doped melts in a graphite boat.
Journal ArticleDOI
Dominant Traps in Liquid Phase Epitaxial GaAs Studied by Controlled Doping with Indium and Antimony
Kanad Mallik,S. Dhar +1 more
TL;DR: In this article, hole traps with optical ionization energies of 0.65 and 0.79 eV are revealed in the material which are assumed to be two levels associated with the hole trap B reported in the literature.
Journal ArticleDOI
Impurity reduction in In0.53Ga0.47As layers grown by liquid phase epitaxy using Er-treated melts
TL;DR: In this article, a detailed analysis of the temperature-dependent Hall mobility data for the samples using a theoretical curve fitting technique revealed that the donor impurities in the material are reduced to a greater extent compared to the acceptors, making the layers compensated.
Journal ArticleDOI
Effect of Er dopant on the properties of In0.53Ga0.47As layers grown by liquid phase epitaxy
TL;DR: In this article, the presence of an electron trap with activation energy of 0.17 eV in the Er-doped In0.53Ga0.47 was confirmed from deep level transient spectroscopy experiments on undoped layers.