Journal ArticleDOI
Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source
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In this paper, self-assembled InAs quantum dots (QDs) emitting at around 1.05μm in wavelength were grown on a GaAs substrate by using the In-flush technique.About:
This article is published in Journal of Crystal Growth.The article was published on 2013-09-01. It has received 12 citations till now. The article focuses on the topics: Quantum dot & Penetration depth.read more
Citations
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Journal ArticleDOI
Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature
TL;DR: In this paper, the effects of the GaAs capping temperature on the morphological and photoluminescence properties of InAs quantum dots (QDs) on GaAs(001) were investigated.
Journal ArticleDOI
Near-infrared superluminescent diode using stacked self-assembled InAs quantum dots with controlled emission wavelengths
Nobuhiko Ozaki,Takuma Yasuda,Shunsuke Ohkouchi,Eiichiro Watanabe,Naoki Ikeda,Yoshimasa Sugimoto,Richard A. Hogg +6 more
TL;DR: In this paper, a near-infrared superluminescent diode (SLD) using stacked InAs/GaAs quantum dots (QDs) was developed.
Journal ArticleDOI
Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source
Nobuhiko Ozaki,Koichi Takeuchi,Yuji Hino,Yohei Nakatani,Takuma Yasuda,Shunsuke Ohkouchi,Eiichiro Watanabe,Hirotaka Ohsato,Naoki Ikeda,Yoshimasa Sugimoto,Edmund Clarke,Richard A. Hogg +11 more
TL;DR: In this paper, the authors developed a NIR broadband light source by integrating self-assembled InAs quantum dots (QDs) grown on a GaAs substrate (InAs/GaAs QDs) with different emission wavelengths.
Journal ArticleDOI
Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots
TL;DR: In this article, the growth of InGaAs/GaAs quantum dots (QDs) in inverted pyramids on pre-patterned {111}B GaAs substrates is a versatile technique allowing for precise site and emission energy control.
Journal ArticleDOI
Emission-wavelength tuning of InAs quantum dots grown on nitrogen-δ-doped GaAs(001)
TL;DR: In this paper, the structural and photoluminescence characteristics of InAs quantum dots (QDs) grown on nitrogen (N) δ-doped GaAs(001) were studied.
References
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Journal ArticleDOI
Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
TL;DR: In this paper, the 2D-3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum-sized dot structures.
Book
Optical Coherence Tomography: Principles and Applications
TL;DR: In this article, the authors discuss the application of OCT in clinical imaging, including OCT in Cardiovascular Medicine OCT in Musculoskeletal Disease OCT in Oncology Other Applications and Conclusions Index.
Journal ArticleDOI
Size and shape engineering of vertically stacked self-assembled quantum dots
TL;DR: In this article, a new procedure for the growth of stacked self-assembled quantum dot layers is described, where the main effect is to convert the quantum dot population into a population of quantum disks of approximately equal height.
Journal ArticleDOI
Self-assembled quantum-dot superluminescent light-emitting diodes
TL;DR: In this paper, the authors describe how self-assembled quantum-dot structures can provide an acceptable and efficient means of realizing such devices utilizing a number of their unique physical properties, such as low-cost, compact, high-power and broadband superluminescent diodes.
Journal ArticleDOI
Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum
TL;DR: In this paper, a superluminescent diode (SLD) with a quantum dot active layer was proposed, which should give a wider output spectrum than a conventional quantum well SLD.