Open AccessProceedings Article
High-speed GaAs PIN photodiodes grown on Si substrates by molecular beam epitaxy
TLDR
A GaAs-on-Si detector can take advantage of the high carrier mobilities and optical absorption coefficient of GaAs and serve as a high-speed receiver in a composite GaAs/Si optoelectronic circuit as mentioned in this paper.Abstract:
The potential integration of the optoelectronic capabilities of GaAs with the highly developed integrated circuit technology of Si has motivated a great deal of effort toward fabricating GaAs devices—particularly lasers—in epitaxial layers grown on Si substrates. A GaAs-on-Si detector can take advantage of the high carrier mobilities and optical absorption coefficient of GaAs and serve as a high-speed receiver in a composite GaAs/Si optoelectronic circuit.read more
Citations
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Journal ArticleDOI
Gallium arsenide and other compound semiconductors on silicon
TL;DR: In this article, the physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed, and the nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail.
Journal ArticleDOI
Optoelectronic device performance on reduced threading dislocation density GaAs/Si
Patrick J. Taylor,William A. Jesser,J. D. Benson,M. Martinka,John H. Dinan,J. Bradshaw,M. Lara-Taysing,Richard P. Leavitt,George J. Simonis,Wayne Chang,William W. Clark,K. A. Bertness +11 more
TL;DR: In this article, a technique for the heteroepitaxy of GaAs/Si films having reduced threading dislocation density is presented, which is achieved by deposition of a stoichiometric GaAs buffer layer by a migration-enhanced epitaxy technique on silicon at 348 K to a thickness greater than the “monolithic thickness, hm.
Proceedings ArticleDOI
Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy
TL;DR: In this article, selective area growth of InP is carried out on an InP precoated 2/spl deg/ off Si substrate in a low pressure hydride vapor phase epitaxy system under different gas phase supersaturation.
Journal ArticleDOI
GaAs p‐i‐n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
TL;DR: In this paper, high-speed, 80μm−diam, GaAs/Alx Ga1−x As p−n photodiodes having frequency response in excess of 7 GHz and internal quantum efficiency approaching 100% were fabricated by low-pressure metalorganic chemical vapor deposition (MOCVD) using both tertiary butylarsine (TBA) and arsine.
Journal ArticleDOI
Fabrication of GaAs photodiode using laser selective area epitaxy
H. Liu,John C. Roberts,J. Ramdani,Salah M. Bedair,J. Farari,Jean-Pierre Vilcot,Didier Decoster +6 more
TL;DR: In this article, the first GaAs p-i-n photodetector was fabricated on a 200×200 μm mesa and showed an impulse response with a full width at half maximum of 150 ps and external quantum efficiency of 60% both at 0 and −1.4 V bias.
References
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Journal ArticleDOI
Gallium arsenide and other compound semiconductors on silicon
TL;DR: In this article, the physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed, and the nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail.
Journal ArticleDOI
Properties of GaAs on Si grown by molecular beam epitaxy
Romuald Houdré,Hadis Morkoç +1 more
TL;DR: In this paper, the authors proposed a hybridization of Si and GaAs technologies on the same wafer for the growth of GaAs on large-diameter wafers.
Journal ArticleDOI
Optoelectronic device performance on reduced threading dislocation density GaAs/Si
Patrick J. Taylor,William A. Jesser,J. D. Benson,M. Martinka,John H. Dinan,J. Bradshaw,M. Lara-Taysing,Richard P. Leavitt,George J. Simonis,Wayne Chang,William W. Clark,K. A. Bertness +11 more
TL;DR: In this article, a technique for the heteroepitaxy of GaAs/Si films having reduced threading dislocation density is presented, which is achieved by deposition of a stoichiometric GaAs buffer layer by a migration-enhanced epitaxy technique on silicon at 348 K to a thickness greater than the “monolithic thickness, hm.
Journal ArticleDOI
Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing
TL;DR: The electrical activity of defects in GaAs grown on Si by molecular beam epitaxy (MBE) has been examined by studying the diode characteristics and deep level transient spectroscopy (DLTS) of Schottky barriers as discussed by the authors.