Journal ArticleDOI
High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
Mihaela Alexandru,Viorel Banu,Matthieu Florentin,Xavier Jordà,M. Vellvehi,Dominique Tournier +5 more
TLDR
In this article, the thermal behavior up to 300oC of 4H-SiC logic gates library is investigated. And the authors present new experimental results showing the thermal behaviour up to 30oC for 4H logic gates with epitaxial resistors and MESFETs.Abstract:
Due to our demonstrated stable Tungsten-Schottky barrier at elevated temperatures, and also thanks to our technological process maturity regarding SiC-Schottky contact fabrication, we have implemented the digital logic gates library adopting a normally-on MESFET topology. In this paper we present new experimental results showing the thermal behavior up to 300oC of 4H-SiC logic gates library, monolithically integrating normally-on MESFETs and epitaxial resistors. The implemented SiC devices are based on important CMOS features and are specially designed for large ICs device integration density.read more
Citations
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Journal ArticleDOI
SiC Integrated Circuit Control Electronics for High-Temperature Operation
Mihaela Alexandru,Viorel Banu,X. Jorda,Josep Montserrat,Miquel Vellvehi,Dominique Tournier,José Millan,Philippe Godignon +7 more
TL;DR: A prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip.
SiC CMOS and memory devices for high-temperature integrated circuits
TL;DR: High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high temperature turbines, industrial gas sensors a....
Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors
TL;DR: The 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for highvoltage and high-temperature operations due to their high current capability, low specific on-resistance, and proces... as mentioned in this paper.
High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
TL;DR: In this article, high-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury, such as Mars and Mercury.
Dissertation
Analytical and Optimization Based Modeling Techniques to Assess the Performance of Submicron SiC MESFETs
TL;DR: In this article, a detailed analytical mathematical model describing I − V characteristic of a submicron SiC MESFET has been presented and compared with conventional velocity saturation techniques, where the depletion layer after the onset of current saturation has been treated as constant.
References
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Journal ArticleDOI
Extreme temperature 6H-SiC JFET integrated circuit technology
Philip G. Neudeck,Steven L. Garverick,David J. Spry,Liang-Yu Chen,Glenn M. Beheim,Michael J. Krasowski,M. Mehregany +6 more
TL;DR: In this article, the development of extreme temperature (up to 500 °C) integrated circuit technology based on epitaxial 6H-SiC junction field effect transistors (JFETs) is discussed.
Proceedings ArticleDOI
Design of logic gates for high temperature and harsh radiation environment made of 4H-SiC MESFET
TL;DR: The present work is a demonstration of logic gates design with normally-on 4H-SiC MESFET devices using HT Spice models extracted from experimental measurements, allowing the implementation of complex logic embedded in power management circuitry.
Proceedings ArticleDOI
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits
TL;DR: High temperature experimental results in the 25°C-300°C temperature range of the 4H-SiC planar-MESFET specially designed and fabricated for high density SiC integrated circuits implementation are presented.
Proceedings ArticleDOI
Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors
TL;DR: In this article, the experimental comparison between mesa isolation and p+ implantation junction isolation for 4H-SiC MESFET transistors is presented, where mesa is used for the definition of individual devices due to its simplicity as fabrication process.
Journal ArticleDOI
4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
TL;DR: The P+ implantation isolation technology offers important perspectives regarding the integration density of devices per unit area and wafer surface, being able to use far more complex design geometry for modeling ICs on SiC.