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SiC CMOS and memory devices for high-temperature integrated circuits
TLDR
High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high temperature turbines, industrial gas sensors a....Abstract:
High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors a ...read more
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Properties of group-IV, III-V and II-VI semiconductors
TL;DR: In this article, the authors present an overview of the properties of optical dispersion in terms of properties such as: 1.1 Ionicity. 2.2 Specific Heat. 3.4 Microhardness. 4.5 Sound Velocity.
Very High Selective N^+ poly-Si RIE with Carbon Elimination : Etching and Deposition Technology
Abstract: The effect of carbon contamination was studied in low-temperature HBr RIE of n+-doped poly-Si etching. With a resist mask, which is a notable carbon source, selectivity (poly-Si/SiO2) was 10 to 20. With a SiO2 mask and carbon elimination from various sources such as gas, piping system and reactor wall, SiO2 etching rate was suppressed, and selectivity of more than 300 was achieved with a self-bias voltage of 400 V. Addition of a small amount of oxygen after carbon elimination removed residual carbon and enhanced the selectivity up to 3000. The anisotropic profile was not affected by carbon elimination since the side-wall protection by reaction products (SiBrx ) was the mechanism of anisotropy. The effect of carbon on the selectivity was explained by the thermodynamics on the basis of bond strengths of reaction products.
Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes
TL;DR: In this article, the authors proposed an attractive material for highvoltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity.
Journal Article
Self-aligned 4H-SiC nMOSFETs for harsh environment electronics
Tatsuya Kurose,Shin-Ichiro Kuroki,Seiji Ishikawa,Tomonori Maeda,Hiroshi Sezaki,Takahiro Makino,Ohshima Takeshi,Mikael Östling,Carl-Mikael Zetterling +8 more
TL;DR: In this paper, a self-aligned 4H-SiC nMOSFET was proposed to achieve low parasitic capacitance, which is achieved by the selfaligned structure of the NN.
Proceedings ArticleDOI
Development of an Optimized Converter Layer for a Silicon-Carbide-Based Neutron Sensor for the Detection of Fissionable Materials
TL;DR: In this paper, the authors describe the early stage development of a miniature silicon carbide neutron sensor for applications including robotic monitoring at the Fukushima Daiichi nuclear power plant, specifically, within the primary containment vessel for fuel debris detection and retrieval.
References
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Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Theory of polarization of crystalline solids
TL;DR: It is shown that physically $\ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions.