Journal ArticleDOI
Hole conduction and valence‐band structure of Si3N4 films on Si
Z. A. Weinberg,R. A. Pollak +1 more
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In this article, X-ray photo-emission spectroscopy (XPS) was performed on thin films of Si3N4 deposited on Si using carrier injection from low-energy corona ions and a shallow junction detector.Abstract:
Transport measurements were performed on thin films of Si3N4 deposited on Si using carrier injection from low‐energy corona ions and a shallow junction detector. Large hole conduction is found for both corona polarities. Examination of the electronic structure of Si3N4 by x‐ray photoemission spectroscopy (XPS or ESCA) reveals one broad structure 10 eV wide (FWHM) at the top of the valence bands which results from the bonding of the Si 3s, Si 3p, and N 2p orbitals. This finding is consistent with the hole conduction we observe. The XPS results are compared with those from amorphous SiO2. The tops of the valence band of Si3N4 and SiO2 are found to lie 1.5±0.2 eV and 4.5±0.2 eV, respectively, below the Fermi level of a thin overlayer of gold.read more
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Photoelectric Memory Effect in Graphene Heterostructure Field-Effect Transistors Based on Dual Dielectrics
Hyun Ho Choi,Hyun Ho Choi,Jaesung Park,Sung Huh,Seong Kyu Lee,Byungho Moon,Sang Woo Han,Chanyong Hwang,Kilwon Cho +8 more
TL;DR: In this paper, photo and field (PF)-induced doping of a graphene-heterostructure field effect transistor (graphene HFET) using a double-layered gate insulator consisting of narrow-bandgap insulator (NGI) and wide-band-gap (WGI) was investigated.
Journal ArticleDOI
The electronic structure of silicon nitride
TL;DR: In this article, the electronic structure of amorphous silicon nitride is discussed within the framework of a Linear Combination of Atomic Orbitals (LCAO) calculation, and the static effective charge and the optical dielectric constant are calculated.
Journal ArticleDOI
Degradation properties in metal‐nitride‐oxide‐semiconductor structures
TL;DR: In this article, the degradation of metal-nitride-oxide-semiconductor (MNOS) structures is investigated using mainly p-channel transistors, and hole traps created in the SiO2 layer appear to be E′ centers when the experimental results are fitted to the theoretical calculations.
Journal ArticleDOI
Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C
TL;DR: In this article, the results of a study on electrical conduction in low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650°C were described and a design graph was given that describes the maximum E-field that can be applied over silicon-nitride films at high temperatures before electrical breakdown occurs.
References
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Journal ArticleDOI
Current Transport and Maximum Dielectric Strength of Silicon Nitride Films
TL;DR: In this paper, it was shown that at any given temperature and electric field, the current transport is essentially independent of the substrate material, the film thickness, or the polarity of the electrodes.
Journal ArticleDOI
Photoemission Measurements of the Valence Levels of Amorphous Si O 2
T. H. DiStefano,D. E. Eastman +1 more
TL;DR: The complete valence band in amorphous Si${\mathrm{O}}_{2}$ has been examined by photoelectron spectroscopy at photon energies of 21.2, 26.9, 40.8, and 1486.6 eV as mentioned in this paper.
Journal ArticleDOI
Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
P. C. Arnett,B. H. Yun +1 more
TL;DR: In this paper, results of charge−centroid measurements on thin-oxide MNOS devices are interpreted with a charge trapping model, leading to values for the nitride trap density, capture cross section, and average trapping distance of 6×1018/cm3, 5×10−13 cm2, and 35 A, respectively.
Journal ArticleDOI
Hole mobility and transport in thin SiO2 films
TL;DR: In this article, the first measurement of hole mobility and its temperature dependence in thermally grown SiO2 on Si was reported and found to follow μ≃20 exp(−0.6eV/kT) cm2/V sec.
Journal ArticleDOI
Properties of MNOS structures
K.I. Lundstrom,Christer Svensson +1 more
TL;DR: In this paper, an analytical theory for the switching time constant of thin oxide MNOS structures is derived and curves of the switching-time constant versus the nitride field are computed, which are useful in the design of MNOS-memory transistors.