Journal ArticleDOI
Hot electron diffusion in CdTe
TLDR
The longitudinal diffusion coefficient of electrons in CdTe has been measured with the time-of-flight technique at 300 K for field strength ranging from Ohmic values up to 60 kV/cm.About:
This article is published in Solid State Communications.The article was published on 1975-12-01. It has received 10 citations till now. The article focuses on the topics: Diffusion (business) & Field strength.read more
Citations
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Journal ArticleDOI
Diffusion coefficient of electrons in silicon
TL;DR: In this article, an experimental and theoretical analysis of the diffusivity of electrons in Si as function of temperature, field strength, and field direction has been performed with the Monte Carlo procedure, which correctly interprets both the new diffusion data and other well-established electron transport properties.
Journal ArticleDOI
Theory of fluctuations in nonequilibrium electron gas
Journal ArticleDOI
Fluctuations and noise of hot carriers in semiconductor materials and devices
TL;DR: In this paper, the macroscopic expressions for noise sources are shown not specific to the hot carrier regime, though dependent on the electric field strength, and the microscopic noise source expressions, via the transition rates, give a unified view of the noise sources.
Journal ArticleDOI
Applications of CdTe. A review
TL;DR: In this article, a review of the history of CdTe in short form and delineates the applications potential for the compound is presented and some suggestions on further work in these areas are also advanced.
Book ChapterDOI
Noise and Diffusion of Hot Carriers
TL;DR: In this paper, the bias point is determined as the intersection of the characteristics of the system under consideration and of the output circuit, and the noise depends partly on the inner properties of a system.
References
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Journal ArticleDOI
Transport Properties of GaAs
J. G. Ruch,G. S. Kino +1 more
TL;DR: In this paper, the authors measured the absolute values of the electron drift velocity, the diffusion coefficient, and the trapping time as a function of the electric field and showed that the experimental results are in agreement with the Butcher-Fawcett theory.
Journal ArticleDOI
Drift velocity of electrons and holes and associated anisotropic effects in silicon
TL;DR: In this article, the drift velocity of electrons and holes in high purity silicon has been measured, with the time of flight technique, as a function of electric field (0·1−50 KV/cm) at several temperatures between 77 and 300°K.
Journal ArticleDOI
Calculation of the hot electron diffusion rate for GaAs
W. Fawcett,H.D. Rees +1 more
TL;DR: In this paper, Monte Carlo calculations predict a strong anisotropy of the high field electron diffusion rate for GaAs, which is a strong indicator of high-energy electron diffusion.
Journal ArticleDOI
Transport Properties of CdTe
TL;DR: The drift-velocity characteristic for electrons in CdTe has been measured by the transientcharge technique from 77 to 370 \ifmmode^\circ\else\text degree\fi{}K and for electric fields up to 70 kV/cm as mentioned in this paper.
Journal ArticleDOI
Diffusivity of electrons and holes in silicon
T. W. Sigmon,J. F. Gibbons +1 more
TL;DR: In this article, the variation of electron and hole diffusivity and drift velocity in the ''warm electron'' range of electric field (1-50 kV/cm) has been measured for 〈111〉-oriented silicon at 300°K.