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Hyperthermal ion beam system optimized for studying the effects of kinetic energy on thin-film growth

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TLDR
In this article, a hyperthermal and low-energy ion beam optimized for studying morphological trends in epitaxial metal thin films as a function of atomic kinetic energy has been built and characterized.
Abstract
A hyperthermal and low-energy ion beam (10–1000 eV) optimized for studying morphological trends in epitaxial metal thin films as a function of atomic kinetic energy has been built and characterized. The ion beam line produces metal and inert gas ions and is specially designed to produce up to 2.9 μA of highly collimated ions with single amu mass resolution while precisely controlling the ion’s energy, achieving a ΔE/E∼0.1. Energy resolution can be enhanced further at the expense of flux. Varying the focal length of the final electrostatic lens allows the flux density to be adjusted from 10 to 500 nA/mm2. The beam line has been coupled to an ultra-high-vacuum deposition chamber with a versatile sample manipulator, an electron beam deposition source, residual gas analysis, and real-time reflection high-energy electron diffraction (RHEED). Once prepared, the sample can be moved in situ to perform Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). The high fluxes with narrow energy di...

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Citations
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Journal ArticleDOI

Low-energy ionic collisions at molecular solids.

TL;DR: Detailed aspects of Cs reactive scattering and its application for surface analysis have been reviewed and the mechanism for abstraction reaction is described.
Journal ArticleDOI

Soft-landing preparative mass spectrometry

TL;DR: This review of soft landing in the hyperthermal and thermal kinetic energy regimes is organized according to instrumental considerations and molecular families, with a discussion of theoretical work at the end.
Journal ArticleDOI

Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

TL;DR: Using a laboratory-scale apparatus, they enrich 28Si and produce material with 40 times less residual 29Si than previously reported as discussed by the authors, which is an alternative to industrial gas centrifuges for providing materials critical for long spin coherence times in quantum information devices.
Journal ArticleDOI

Targeted enrichment of 28Si thin films for quantum computing.

TL;DR: This work uses hyperthermal energy ion beam deposition with silane gas to deposit epitaxial 28Si and develops a model to predict the residual 29Si isotope fraction based on deposition parameters, which is measured using secondary ion mass spectrometry (SIMS).
Journal ArticleDOI

Critical nucleus phase diagram for the Cu(100) surface

TL;DR: In this article, an experimental exploration of island nucleation dynamics during epitaxial film growth on the $\mathrm{Cu}(100)$ surface is presented that connects previous results from other groups at low temperatures with the room temperature regime.
References
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Journal ArticleDOI

Collisions of ions with surfaces at chemically relevant energies: Instrumentation and phenomena

TL;DR: An overview of gaseous ion/surface collisions is presented, with special emphasis on the behavior of polyatomic projectile ions at hyperthermal collision energies (1-100 eV) and the instrumentation needed for such studies as discussed by the authors.
Book

Molecular Beam Epitaxy: Applications to Key Materials

TL;DR: In this paper, the authors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons.
Journal ArticleDOI

Magnetron sputtering of films with controlled texture and grain size

TL;DR: In this paper, the formation and properties of nanocomposite coatings with grains smaller than 100 nm are discussed and new physical properties of these materials, not attainable in polycrystalline films with grains greater than 100nm, are outlined.
Journal ArticleDOI

Adatom yields, sputtering yields, and damage patterns of single-ion impacts on Pt(111)

TL;DR: In this paper, the dependence of adatom and sputtering yields on ion energy and ion mass was analyzed using scanning-tunneling-microscopy methods, which allowed us to determine the adatom yield, the number of adatoms created per primary ion, and the sputtering yield.
Journal ArticleDOI

Simulations of energetic beam deposition: From picoseconds to seconds

TL;DR: In this article, the authors present a method for simulating crystal growth by energetic beam deposition, which combines a kinetic Monte Carlo simulation for the thermal surface diffusion with a small scale molecular-dynamics simulation of every single deposition event.
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