Targeted enrichment of 28Si thin films for quantum computing.
Ke Tang,Ke Tang,Hyunsoo Kim,Hyunsoo Kim,Aruna Ramanayaka,David S. Simons,Joshua M. Pomeroy +6 more
- Vol. 4, Iss: 3, pp 035006
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TLDR
This work uses hyperthermal energy ion beam deposition with silane gas to deposit epitaxial 28Si and develops a model to predict the residual 29Si isotope fraction based on deposition parameters, which is measured using secondary ion mass spectrometry (SIMS).Abstract:
We report on the growth of isotopically enriched 28Si epitaxial films with precisely controlled enrichment levels, ranging from natural abundance ratio of 92.2% all the way to 99.99987% (0.83 × 10-6 mol mol-1 29Si). Isotopically enriched 28Si is regarded as an ideal host material for semiconducting quantum computing due to the lack of 29Si nuclear spins. However, the detailed mechanisms for quantum decoherence and the exact level of enrichment needed for quantum computing remain unknown. Here we use hyperthermal energy ion beam deposition with silane gas to deposit epitaxial 28Si. We switch the mass selective magnetic field periodically to control the 29Si concentration. We develop a model to predict the residual 29Si isotope fraction based on deposition parameters and measure the deposited film using secondary ion mass spectrometry (SIMS). The measured 29Si concentrations show excellent agreement with the prediction, deviating on average by only 10%.read more
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Atomic-precision advanced manufacturing for Si quantum computing
Ezra Bussmann,Robert E. Butera,James H. G. Owen,John N. Randall,Steven M. Rinaldi,Andrew Baczewski,Shashank Misra +6 more
TL;DR: A materials synthesis method that is called atomic-precision advanced manufacturing (APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic precision, is making an impact as a powerful prototyping tool for quantum computing as mentioned in this paper.
Journal ArticleDOI
Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation
D. Holmes,Brett C. Johnson,C. Chua,Benoit Voisin,Sacha Kocsis,Sergey Rubanov,Simon G. Robson,Jeffrey C. McCallum,Dane R. McCamey,Sven Rogge,David N. Jamieson +10 more
TL;DR: In this paper, an isotopically enriched surface layers of nat Si by sputtering using high fluence $28}$Si$^-$ implantation were measured with pulsed electron spin resonance, confirming successful donor activation upon annealing.
Journal ArticleDOI
A Study of the Formation of Isotopically Pure 28Si Layers for Quantum Computers using Conventional Ion Implantation
Ella Beatrice Schneider,Jonathan Gerald England,Luke Antwis,Alex Royle,Roger P. Webb,Russell M. Gwilliam +5 more
Journal ArticleDOI
Isotopic enrichment of silicon by high fluence 28 Si − ion implantation
D. Holmes,Brett C. Johnson,C. Chua,Benoit Voisin,Sacha Kocsis,Sergey Rubanov,Simon G. Robson,Jeffrey C. McCallum,Dane R. McCamey,Sven Rogge,David N. Jamieson +10 more
TL;DR: In this paper, an isotopically enriched surface layer of silicon-28 was obtained by sputtering using high fluence for implantation, achieving a coherence time of 4.67%.
Journal ArticleDOI
Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
Cameron Kopas,Justin Gonzales,Shengke Zhang,Daniel Queen,B. Wagner,McDonald Robinson,James Huffman,Nathan Newman +7 more
TL;DR: In this article, the authors used coplanar microwave resonators with narrow trace widths to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor.
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Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28
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TL;DR: Eliminating isotopic impurities from the host material improves coherence times, as observed for qubits, based on the nuclear spin of neutral P donors in Si, and shows that a coherent spin superposition can be cycled from 4.2 kelvin to room temperature and back, and a cryogenic coherence time of 3 hours is reported.
Supplementary Materials for Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28
K. Saeedi,Stephanie Simmons,Jeff Z. Salvail,Phillip Dluhy,Helge Riemann,Nikolai V. Abrosimov,Peter Becker,Hans-Joachim Pohl,John J. L. Morton,L W Mike +9 more
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