Journal ArticleDOI
Hyperthermal ion beam system optimized for studying the effects of kinetic energy on thin-film growth
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In this article, a hyperthermal and low-energy ion beam optimized for studying morphological trends in epitaxial metal thin films as a function of atomic kinetic energy has been built and characterized.Abstract:
A hyperthermal and low-energy ion beam (10–1000 eV) optimized for studying morphological trends in epitaxial metal thin films as a function of atomic kinetic energy has been built and characterized. The ion beam line produces metal and inert gas ions and is specially designed to produce up to 2.9 μA of highly collimated ions with single amu mass resolution while precisely controlling the ion’s energy, achieving a ΔE/E∼0.1. Energy resolution can be enhanced further at the expense of flux. Varying the focal length of the final electrostatic lens allows the flux density to be adjusted from 10 to 500 nA/mm2. The beam line has been coupled to an ultra-high-vacuum deposition chamber with a versatile sample manipulator, an electron beam deposition source, residual gas analysis, and real-time reflection high-energy electron diffraction (RHEED). Once prepared, the sample can be moved in situ to perform Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). The high fluxes with narrow energy di...read more
Citations
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Journal ArticleDOI
An energy-filtering device coupled to a quadrupole mass spectrometer for soft-landing molecular ions on surfaces with controlled energy.
TL;DR: The ion beam that impinges on the sample surface satisfies now the soft-landing criterion for molecular ions, opening new research opportunities in the numerous scientific domains involving charges adsorbed on insulating surfaces.
Journal ArticleDOI
99.996 % 12C films isotopically enriched and deposited in situ
TL;DR: In this paper, secondary ion mass spectrometry (SIMS) was used to measure the coherence times of nitrogen-vacancy (NV) centers in 12C enriched diamond exceeding milliseconds.
Journal ArticleDOI
A compact, ultra-high vacuum ion source for isotopically enriching and depositing 28Si thin films.
TL;DR: An ultrahigh vacuum (UHV) compatible Penning ion source for growing pure, highly enriched 28Si epitaxial thin films is presented and the discharge properties of this new source, the ion mass spectrum when coupled to the authors' mass filter, and the secondary ion mass spectroscopy of the grown films are discussed.
Journal ArticleDOI
A Study of the Formation of Isotopically Pure 28Si Layers for Quantum Computers using Conventional Ion Implantation
Ella Beatrice Schneider,Jonathan Gerald England,Luke Antwis,Alex Royle,Roger P. Webb,Russell M. Gwilliam +5 more
STM studies of island nucleation during hyperthermal atom deposition
Joshua M. Pomeroy,Joel D. Brock +1 more
TL;DR: In this article, a hyperthermal energy ion beam line with precise control over ion kinetic energy was used to grow copper islands on a Cu(100) substrate, where sputter erosion and the formation of adatom-vacancy pairs contribute to the increase in island densities.
References
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