Journal ArticleDOI
Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs
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This article is published in Silicon.The article was published on 2022-01-27. It has received 4 citations till now. The article focuses on the topics: Gate dielectric & Dielectric.read more
Citations
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Journal ArticleDOI
Comparative Performance Analysis of Dual Material-Dielectric Pocket-Nano Tube (DM-DP-NT) & Dual Material-Nano Tube (DM-NT) MOSFETs
TL;DR: In this article , the performance of dual material-Dielectric pocket-Nano Tube (DM-DP-NT) MOSFET with dual material nano-tube (DMNT) was compared with DM-NT MOSFLET.
Journal ArticleDOI
Temperature dependent performance analysis of high-K dielectric pocket-double cylindrical surrounding gate (HKG-DP-DCSG) & high K-dual material- double cylindrical surrounding gate (HKG-DM-DCSG) MOSFETs
TL;DR: In this article , the authors compared the temperature-dependent performance analysis of high-K dielectric pocket-Double Cylindrical Surrounding Gate (HKG-DP-DCSG) and high-k-Dual material- double cylindrical surrounding gate (HG-DM-CSG) MOSFETs.
Proceedings ArticleDOI
Performance Evaluation of Dual-Metal (DM) Dielectric-Pocket (DP) Nanotube MOSFETs at Extreme Temperature Conditions
TL;DR: In this article , the performance of Nanotube (NT) MOSFETs was improved by using three performance booster techniques: a dielectric pocket (DP) equipped channel degrades the off-state current (Ioff), a high-k DPG and a dual-metal gate approach to improve immunity towards short channel effects (SHEs).
Proceedings ArticleDOI
Assessment of hot carrier stress induced threshold voltage shift in gate-all-around MOSFETs
TL;DR: In this article , the authors present an investigation of hot-carrier stress in GAA MOSFETs under different stress conditions, which results in a leakage pathway in the gate dielectric, resulting in degradation of the device performance.
References
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