Journal ArticleDOI
Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures
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In this article, a high energy (up to 150 keV) Ga+ focused ion beam is used to implant quantum well structures and interdiffuse GaAs/GaAlAs heterojunctions thus creating quantum wires and boxes.Abstract:
A high‐energy (up to 150 keV) Ga+ focused ion beam is used to implant quantum well structures and interdiffuse GaAs/GaAlAs heterojunctions thus creating quantum wires and boxes. We investigate the optical properties of these structures using low‐temperature cathodoluminescence. Wires as wide as 800 A have been observed 2000 A below the surface. We study the optical damage and the interdiffusion process as a function of the implantation parameters (ion energy ion dose) and as a function of the rapid thermal annealing time. A universal correlation between the optical damage and the interdiffusion length has been found. The optimum process conditions are proposed.read more
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Journal ArticleDOI
GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
TL;DR: In this article, a tetrahedral quantum dot (TQD) was proposed to make a zero-dimensional electron-hole system, where the TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates.
Journal ArticleDOI
Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing
Philip J. Poole,S. Charbonneau,G. C. Aers,T. E. Jackman,Margaret Buchanan,M. Dion,R. D. Goldberg,Ian V. Mitchell +7 more
TL;DR: In this paper, the photoluminescence data correlated well with the calculated total number of vacancies created in the sample, suggesting that defect diffusion is very efficient in InP, where the defects had to diffuse primarily through Al0.71Ga0.29As, these quantities correlate strongly, for short anneal times, with calculated vacancy generation and ion deposition at the depth of the quantum well prior to annealing.
Journal ArticleDOI
Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion
TL;DR: In this article, a novel technique is presented to modulate the effective band gap of GaAl/AlGaAs quantum well structures by heating the sample locally with a focussed laser beam.
Journal ArticleDOI
Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures
TL;DR: In this article, focused ion beam implantation of Ga into GaAlAs/GaAs quantum wells occurs much deeper than expected from theory of implantation into amorphous GaAs and the lateral straggling is one order of magnitude smaller than predicted by the same theories.
Journal ArticleDOI
Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused-ion-beam implantation
L. B. Allard,G. C. Aers,S. Charbonneau,T. E. Jackman,Robin L. Williams,I. M. Templeton,Margaret Buchanan,D. Stevanovic,F. J. D. Almeida +8 more
TL;DR: In this article, the compositional disordering induced by Ga focused ion-beam implantation in a series of strained InGaAs/GaAs quantum wells (QW) was estimated.