Journal ArticleDOI
Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
Laurent Ottaviani,Stéphane Biondo,Stéphane Morata,Olivier Palais,Thierry Sauvage,Frank Torregrosa +5 more
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In this article, the influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied.Abstract:
We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied. A higher heating-rate was found to preserve the rms roughness for annealing temperatures lower than 1700°C, and to improve the sheet resistance whatever the annealing temperature due to a better dopant activation (except for 1600°C process, which induced a dark zone in the sample volume). A complete activation was calculated for an annealing at 1700°C during 30 minutes, with a ramp-up at 20°C/s. Rising the cooling-down rate appeared to increase the sheet resistance, probably due to a higher concentration of point defects in the implanted layer.read more
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Journal ArticleDOI
4H-silicon carbide thin junction based ultraviolet photodetectors
Stephane Biondo,M. Lazar,Laurent Ottaviani,Wilfried Vervisch,V. Le Borgne,M. A. El Khakani,Julian Duchaine,Frederic Milesi,Olivier Palais,Dominique Planson +9 more
TL;DR: In this paper, the photoresponse properties of 4H-SiC UV-photodetector devices based on a thin junction following their testing in darkness and under UV light over the 200 to 400 nm range were investigated.
Book ChapterDOI
Ultra-Fast Microwave Heating for Large Bandgap Semiconductor Processing
TL;DR: Tian et al. as mentioned in this paper used microwave energy for annealing lattice damage in ion-implanted SiC and GaN and for growing SiC nanowires.
Journal ArticleDOI
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour
Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Olivier Palais,Rachid Daineche,Dominique Planson,Frederic Milesi,Julian Duchaine,Frank Torregrosa +9 more
TL;DR: In this article, the authors deal with the study of a UV photodetector device based on SiC material undergoing a p-i-n structure process, and the current densityvoltage (J-V) measurements in reverse and forward bias, are performed on the device.
Journal ArticleDOI
4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation
B. Berenguier,Laurent Ottaviani,Stephane Biondo,Olivier Palais,M. Lazar,Frederic Milesi,F. Torregrosa,E.V. Kalinina,Alexander A. Lebedev,Wilfried Vervisch,Abdallah Lyoussi +10 more
TL;DR: In this article, the p+n photodiodes based on ultrathin junctions have been fabricated with distinct processes for the p-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation.