Journal ArticleDOI
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour
Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Olivier Palais,Rachid Daineche,Dominique Planson,Frederic Milesi,Julian Duchaine,Frank Torregrosa +9 more
TLDR
In this article, the authors deal with the study of a UV photodetector device based on SiC material undergoing a p-i-n structure process, and the current densityvoltage (J-V) measurements in reverse and forward bias, are performed on the device.Abstract:
In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p+-type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an experimental study by the SIMS analysis.read more
Citations
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Journal ArticleDOI
Materials Science Forum
TL;DR: Properties and Application of Geopolymers Vol. 841 (/MSF.841 /book) Development and Investigation of Materials Using Modern Techniques Vol. 840 (/MS F.840/book) Superplasticity in Advanced Materials ICSAM 2015 Vols.
Journal ArticleDOI
4H-SiC P + N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes
Stéphane Biondo,Laurent Ottaviani,Mihai Lazar,Dominique Planson,Julian Duchaine,V. Le Borgne,M. A. El Khakani,Frederic Milesi,Wilfried Vervisch,Olivier Palais,Frank Torregrosa +10 more
TL;DR: In this paper, two kinds of p+n layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and subsequent annealing) on the device characteristics.
Dissertation
Réalisation de détecteurs de neutrons en carbure de silicium
TL;DR: The I_SMART project as mentioned in this paper proposes a set of nouvelles methodes de realisation de detecteurs de radiations nucleaires and d'etudier leur performance dans different types d'irradiation (neutrons rapides and thermiques) and a different temperatures.
References
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Journal ArticleDOI
Materials Science Forum
TL;DR: Properties and Application of Geopolymers Vol. 841 (/MSF.841 /book) Development and Investigation of Materials Using Modern Techniques Vol. 840 (/MS F.840/book) Superplasticity in Advanced Materials ICSAM 2015 Vols.
Journal ArticleDOI
Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC
TL;DR: In this paper, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC.
Journal ArticleDOI
Study of leakage current and breakdown issues in 4H-SiC unterminated Schottky diodes
TL;DR: In this paper, the SiC surface surrounding the metal contact and triple-junction region, rather than crystallographic defects in the epitaxial layer, were responsible for high leakage current and premature breakdown of the as-fabricated diodes.
Journal ArticleDOI
Quantitative SIMS analysis of SiC
TL;DR: In this article, the authors performed a systematic study of ion-implanted 6H-SiC standards to find the optimal regimes for SIMS analysis and acquired relative sensitivity factors (RSFs) for operating conditions typical of practical SIMS applications.
Journal ArticleDOI
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
Vito Raineri,Lucia Calcagno,Filippo Giannazzo,D. Goghero,F. Musumeci,Fabrizio Roccaforte,Francesco La Via +6 more
TL;DR: In this paper, scanning capacitance microscopy has been used to determine the concentration profiles of implanted 6H-SiC samples in a conventional furnace with a low ramp rate and with a high ramp rate (200 °C/s).