Journal ArticleDOI
Influence of temperature on the two band model for negative magnetoresistance in heavily doped semiconductors
B. Giovannini,F.T. Hedgcock +1 more
TLDR
In this article, it was shown that it is possible to obtain a negative magnetoresistance in an impurity banded semiconductor at T = 0°K, provided that the Fermi energy was located at the interband edge where a sharp mobility edge is assumed to exist.About:
This article is published in Solid State Communications.The article was published on 1972-07-01. It has received 21 citations till now. The article focuses on the topics: Magnetoresistance & Colossal magnetoresistance.read more
Citations
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Journal ArticleDOI
Galvanomagnetic Properties of Bi2Se3with Free Carrier Densities below 5 × 1017 cm−3
H. Köhler,A. Fabbicius +1 more
TL;DR: The temperature and magnetic field dependences of their galvanomagnetic properties are investigated in this article, where it was achieved, in the case of Bi2Se3, to produce crystals of n-and p-type conductivity showing concentrations down to 4 × 1016 cm−3.
Journal ArticleDOI
A study of the negative magnetoresistance in pyrocarbons
TL;DR: In this paper, an exhaustive experimental investigation of a series of non-crystalline pyrocarbons has been carried out, and the negative magnetoresistance has been examined as a function of several parameters: temperature (300 − 1·5 K), magnetic field strength (0·25 − 60 kgauss) and sample orientation in the magnetic field.
Journal ArticleDOI
Magnetoresistance in amorphous germanium
TL;DR: The magnetoresistance of evaporated amorphous germanium films ranging in thickness from 200 A to several microns has been measured in the temperature range 77 K < T < 300 K for magnetic fields ranging from 5 G to 100 kG as mentioned in this paper.
Journal ArticleDOI
Magnetoresistance in amorphous semiconductors
Journal ArticleDOI
Magnetoresistance measurements in n-type CdS single crystals annealed in molten Cd and In
TL;DR: In this paper, magnetoresistance measurements have been made at low magnetic fields in the temperature range 77-300K in a series of n-type CdS single crystals annealed in molten Cd and In.
References
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Journal ArticleDOI
Theory of Localized Spins and Negative Magnetoresistance in the Metallic Impurity Conduction
TL;DR: In this article, the co-operative effect of electron correlation and random lattice in the impurity conduction of semiconductors is investigated in terms of the Green's function with in the frame-work of Hartree-Fock approximation.
Journal ArticleDOI
Semiconductor-to-Metal Transition in n -Type Group IV Semiconductors
TL;DR: In this paper, a synthesis of the most significant experimental features of the semiconductor-to-metal transition in group IV semiconductors is given, and two characteristic concentrations are discussed, the first being for a delocalization of electrons (the "Mott" transition), and the second being associated with the entry of the Fermi level into the conduction band of the host material.
Journal ArticleDOI
Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
TL;DR: In this paper, the impurity conduction in phosphorus doped n-type silicon has been investigated at temperatures between 1.1°K and 300°K, and the results showed that the resistivity increases monotonically with temperature T up to the Fermi degeneracy temperature T D of respective samples according to a simple formula, ρ( T )=ρ(4.2^°K)[1+ A (T / T D ) B ], where A and B are constants.
Journal ArticleDOI
Magnetoresistance in Degenerate CdS: Localized Magnetic Moments
R. P. Khosla,J. R. Fischer +1 more
TL;DR: In this paper, the magnetoresistance of CdS samples doped with In has been measured and it was found that the observed magnetoreduction is negative to much higher temperatures and fields than has been reported for any other semiconductor.
Journal ArticleDOI
The metal-nonmetal transition
Nevill Mott,Z Zinamon +1 more
TL;DR: In this article, the Hartree-Fock approximation is used to describe the band overlap or Wilson transition, which occurs when a conduction band overlaps a valence band; this is discussed in § 2 and for noncrystalline systems in § 15.
Related Papers (5)
Two band model for negative magnetoresistance in heavily doped semiconductors
F.T. Hedgcock,T.W. Raudorf +1 more