Journal ArticleDOI
InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength
E. Oomura,H. Higuchi,Y. Sakakibara,R. Hirano,Hirofumi Namizaki,W. Susaki,Ikeda Kenji,K. Fujikawa +7 more
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TLDR
In this paper, the fabrication procedure, designing of an active region and a p-n-p-n current blocking structure, characteristics and the aging results of an InGaAsP/InP buried crescent (BC) laser diode are described.Abstract:
The fabrication procedure, designing of an active region and a p-n-p-n current blocking structure, characteristics and the aging results of an InGaAsP/InP buried crescent (BC) laser diode are described. The BC laser diodes exhibit high laser performances, such as a low-threshold current, a fundamental transverse mode oscillation with linear light output-current characteristics. CW operation at as high as 100°C is achieved with a junction up configuration as a result of the improvement in the current blocking structure. A stable CW operation at 80°C has been realized with a constant optical output power of 5 mW.read more
Citations
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Journal ArticleDOI
Liquid phase epitaxy
TL;DR: In this paper, a comprehensive review of liquid phase epitaxy (LPE) of semiconductors is presented, and the advantages and weaknesses of LPE with respect to device applications in comparison with competing methods are discussed.
Journal ArticleDOI
High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers
TL;DR: In this article, the authors investigated the maximum CW output power in GaInAsP 1.3μm V-grooved inner stripe on P-substrate (VIPS) lasers considering both cavity length and facet reflectivity.
Journal ArticleDOI
Analysis of current leakage in InGaAsP/InP buried heterostructure lasers
TL;DR: In this paper, the mechanism of current leakage at high temperatures in InGaAsP/InP buried heterostructure (BH) lasers with p-n-p-n current blocking structures is analyzed using two-dimensional computer simulation.
Journal ArticleDOI
High-power 1.3-µm InGaAsP P-substrate buried crescent lasers
Y. Sakakibara,H. Higuchi,E. Oomura,Nakajima Yasuo,Y. Yamamoto,K. Goto,H. Namizaki,K. Ikeda,W. Susaki +8 more
TL;DR: In this paper, the InGaAsP P-substrate buried crescent (PBC) laser diodes have been used to achieve a maximum CW temperature of 135°C.
Journal ArticleDOI
Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser
TL;DR: In this article, a new structure semi-insulator embedding flat surface buried heterostructure 1.3 μm InGaAsP/InP laser has been developed using chloride vapor phase epitaxy.
References
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Journal ArticleDOI
Ultimate low-loss single-mode fibre at 1.55 μm
TL;DR: In this article, a very low loss singlemode fiber with a minimum loss of 0.20 dB/km at a wavelength of 1.55 μm is attained; this loss reaches the ultimate lower loss limit of silica-based optical glass fibre.
Journal ArticleDOI
The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption
TL;DR: In this paper, the temperature dependence of the differential quantum efficiency ηd and threshold current density Jth of 1.6 µm In1-xGaxAsyP1y lasers is investigated.
Journal ArticleDOI
Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
TL;DR: In this article, the threshold current of InGaAsP-InP double hetetostructure lasers was investigated through measurements of the temperature dependence of carrier lifetime and radiative efficiency.
Journal ArticleDOI
Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
TL;DR: InGaAsP/InP buried heterostructure lasers with a stripe width of 1-2 μm have been fabricated by two-step liquid phase epitaxy and preferential chemical etching as discussed by the authors.
Journal ArticleDOI
Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers
G.H.B. Thompson,G.D. Henshall +1 more
TL;DR: In this paper, a temperature-dependent nonradiative carrier loss was identified in 1.27 μm (GaIn)(AsP)/InP d.h. lasers as being responsible for the high sensitivity of threshold current to temperature.