Journal ArticleDOI
Injection-controlled size effect on switching of ferroelectric thin films
Reads0
Chats0
TLDR
In this paper, the effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed, and the model gives a good description of the size effect on switching in the Pt/Pb(Zr, Ti)O3/Pt system.Abstract:
The effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed. We develop a model of switching affected by charge injection through a surface dielectric layer to calculate the coercive field of the capacitor as a function of both film thickness and maximal polarization of the switching cycle. The predictions of the model are verified by electrical measurements on sol–gel derived Pb(Zr, Ti)O3 thin films of thickness ranging from 100 to 1000 nm with Pt electrodes. The model gives a good description of the size effect on switching in the Pt/Pb(Zr, Ti)O3/Pt system and enables an explanation for a much smaller magnitude of this effect in Bi-containing and oxide–electrode thin films.read more
Citations
More filters
Journal ArticleDOI
Ferroelectric thin films: Review of materials, properties, and applications
Nava Setter,Dragan Damjanovic,L. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,Angus I. Kingon,Hermann Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,Stephen K. Streiffer +14 more
TL;DR: An overview of the state of the art in ferroelectric thin films is presented in this paper, where the authors review applications: micro-systems' applications, applications in high frequency electronics, and memories based on Ferroelectric materials.
Journal ArticleDOI
Ferroelectric materials for microwave tunable applications
TL;DR: A review of the properties of ferroelectric materials that are relevant to microwave tunable devices is presented in this article, where the theory of dielectric response of tunable bulk materials and thin films is discussed.
Journal ArticleDOI
Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
TL;DR: In this paper, the role of oxygen vacancy migration and electron injection in the reduction of switchable polarization of ferroelectric thin films due to electrical stress (polarization fatigue) is investigated.
Journal ArticleDOI
The Properties of Ferroelectric Films at Small Dimensions
TL;DR: A review of the literature on size effects in ferroelectric materials, with an emphasis on thin film perovskite ferroelectrics, can be found in this paper.
Journal ArticleDOI
Interface-induced phenomena in polarization response of ferroelectric thin films
Alexander K. Tagantsev,G. Gerra +1 more
TL;DR: In this paper, the authors reviewed the existing theoretical models describing the interface-induced phenomena which affect the switching characteristics and dielectric properties of ferroelectric thin-film capacitors.
References
More filters
Journal ArticleDOI
Electrical after-effects in Pb(Ti, Zr)O3 ceramics
K. Carl,K. H. Hardtl +1 more
TL;DR: In this article, an internal bias field Ei which can exceed the coercive field strength was found to behave both like a field and thermally activated process in Pb(Ti, Zr)O3 ceramics doped with Al, Mn or Fe.
Journal ArticleDOI
Switching Time in Ferroelectric BaTiO3 and Its Dependence on Crystal Thickness
TL;DR: In this article, it was shown that the activation field α for the nucleation of new domains is inversely proportional to the thickness of the sample and that the maximum velocity of the domain growth was found to be of the order of the velocity of sound.
Journal ArticleDOI
Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer model
TL;DR: In this paper, it was shown that the coercive field is independent of thickness having a value of 2.4 V/μm and the ratio ebl/dbl is in the range 20−28 nm−1; the voltage across the blocking layer is proportional to the polarization, Vbl=cP, where c=4.1±0.5 Vm2/C; and (iv) the polarization depends on the electric field in the PZT layer.
Journal ArticleDOI
Identification of Passive Layer in Ferroelectric Thin-Films from Their Switching Parameters
TL;DR: In this article, the effect of the dielectric layer on the remanent polarization and the slope of the hysteresis loop was analyzed as a function of both the relative thickness of the layer and the amplitude of the measuring field.
Journal ArticleDOI
Dependence of electrical properties on film thickness in Pb(ZrxTi1−x)O3 thin films produced by metalorganic chemical vapor deposition
TL;DR: In this paper, strong c-axis oriented Pb(ZrxTi1−x)O3 (PZT) thin films with tetragonal perovskite structure (0.45≤x≤0.52) were epitaxially grown on (100)Pt/(100)MgO substrates using metalorganic chemical vapor deposition.