Proceedings ArticleDOI
Integrated PIN photodiodes in high-performance BiCMOS technology
M. Fortsch,Horst Zimmermann,W. Einbrodt,K. Bach,Holger Pless +4 more
- pp 801-804
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TLDR
In this paper, a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology is presented, having no verifiable influence on the transistor parameters.Abstract:
We attain a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology. Only a slight process modification, having no verifiable influence on the transistor parameters is necessary. We achieve bandwidths of 625 MHz and 240 MHz at 670 and 780 nm as well as a quantum efficiency of 96.5%.read more
Citations
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Journal ArticleDOI
Improved radiation tolerance of MAPS using a depleted epitaxial layer
Andrei Dorokhov,G. Bertolone,J. Baudot,A. Brogna,C. Colledani,Gilles Claus,R. De Masi,Michael Deveaux,G. Dozière,Wojciech Dulinski,Jean-Charles Fontaine,M. Goffe,A. Himmi,Ch. Hu-Guo,K. Jaaskelainen,M. Koziel,F. Morel,C. Santos,M. Specht,I. Valin,G. Voutsinas,F. M. Wagner,Marc Winter +22 more
TL;DR: In this paper, the authors show that the MIMOSA-25 sensor can achieve a signal-to-noise ratio (SNR) of ∼ 50 when compared to the undepleted one.
Journal ArticleDOI
Integrated fiber optical receiver reducing the gap to the quantum limit.
TL;DR: Experimental results of a single-photon avalanche diode (SPAD) based optical fiber receiver integrated in 0.35 µm PIN-photodiode CMOS technology are presented, which are a major advance towards direct detection optical receivers working close to the quantum limit.
Journal ArticleDOI
PIN Photodiode Optoelectronic Integrated Receiver Used for 3-Gb/s Free-Space Optical Communication
TL;DR: In this paper, an optoelectronic integrated receiver chip including five PIN photodiodes was presented, which is capable of establishing a 3-Gb/s data transfer over a distance of 19 m at a BER of <;10 -9 , and over an additional distance of 18 m at the same level of BER.
Journal ArticleDOI
220-MHz monolithically integrated optical sensor with large-area integrated PIN photodiode
TL;DR: In this article, a PIN photodiode integrated in a BiCMOS process was proposed, which combines a quantum efficiency of nearly 100% for red light, fast response times, and a low junction capacitance.
Journal ArticleDOI
Low-Power BiCMOS Optical Receiver With Voltage-Controlled Transimpedance
N. Tadic,Horst Zimmermann +1 more
TL;DR: An optical receiver with voltage-controlled transimpedance using a current conveyor and a voltage amplifier monolithically integrated with a PIN photodiode in 0.6 mum BiCMOS technology is presented.
References
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Journal ArticleDOI
A theory of transistor cutoff frequency (f T ) falloff at high current densities
TL;DR: In this paper, it was shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities.
Journal ArticleDOI
Si-OEIC with a built-in PIN-photodiode
M. Yamamoto,M. Kubo,K. Nakao +2 more
TL;DR: In this article, a Si-OEIC with a built-in PIN-photodiode has been developed by a new device structure consisting of stacked epitaxial layers each with a buried diffusion region.
Proceedings ArticleDOI
A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applications
TL;DR: In this article, a monolithically integrated, low-bias, shortwave silicon photodetector and high-speed CMOS preamplifier in a standard VLSI BiCMOS technology with no process modifications is described.
Journal ArticleDOI
Monolithic high-speed CMOS-photoreceiver
TL;DR: In this article, an optoelectronic integrated CMOS receivers for applications in optical data transmission and in optical interconnects are presented. And the rise and fall times of the integrated p-i-n photodiodes are 0.19 and 0.24 ns, respectively, corresponding to -3 dB bandwidths in excess of 1.4 GHz.
Proceedings ArticleDOI
A DC-to-250 MHz current pre-amplifier with integrated photo-diodes in standard BiCMOS, for optical-storage systems
TL;DR: In this article, an optoelectronic IC contains pre-amplifiers and integrated photodiodes for optical storage systems (CD, DVD, and DVR), the pre-amps exhibit 4.6 nV/4 Hz noise and the diodes have 0.25 pF junction-capacitance.