scispace - formally typeset
Journal ArticleDOI

Investigation of grain boundary grooves at the solid–liquid interface during directional solidification of multi-crystalline silicon: in situ characterization by X-ray imaging

Reads0
Chats0
TLDR
In this paper, the grain boundary groove evolution mechanisms during solidification have been studied and the shape and evolution revealed grain competition phenomena and were drastically modified by the occurrence of new grains or twins.
About
This article is published in Journal of Crystal Growth.The article was published on 2013-08-15. It has received 39 citations till now. The article focuses on the topics: Grain boundary strengthening & Grain boundary.

read more

Citations
More filters
Journal ArticleDOI

In situ observation of solidification patterns in diffusive conditions

TL;DR: A review of recent in situ experimentation studies of solidification front patterns and microstructures in alloys can be found in this paper, where the dynamics of cellular, dendritic, and eutectic growth patterns in diffusive-growth conditions, that is, in the absence of convection in the liquid.
Journal ArticleDOI

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

TL;DR: In this article, an advanced in situ X-ray imaging and complementary ex situ investigations of the growth mechanisms when silicon solidifies on a monocrystalline seed oriented 〈110〉 in the solidification direction were conducted.
Journal ArticleDOI

Impact of solute flow during directional solidification of a Ni-based alloy: In-situ and real-time X-radiography

TL;DR: In this paper, the impact of solute flow on the dendrite growth velocity was analyzed by using a Rayleigh number-based model, highlighting the need for direct simulations in the future.
Journal ArticleDOI

On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification

TL;DR: Grain orientation and competition during growth has been analyzed in directionally solidified multi-crystalline silicon samples using synchrotron X-ray imaging techniques (radiography and topography).
Journal ArticleDOI

Revisiting the twinning mechanism in directional solidification of multi-crystalline silicon sheet

TL;DR: In this article, a detailed analysis of the grain structures in the multi-crystalline silicon sheets grown by directional solidification was performed and the free energy change (per unit length) when one or two facets anchor to the groove tri-junction and the critical undercooling for twinning was derived and compared with experiments.
References
More filters
Journal ArticleDOI

Grain control in directional solidification of photovoltaic silicon

TL;DR: In this paper, the progress in grain control of directional solidification (DS) multi-crystalline silicon (mc-Si) from lab-scale to industrial-scale experiments is reviewed.
Journal ArticleDOI

A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors

TL;DR: In this article, a historical review of the development of knowledge of defect formation in semiconductor crystals is given, starting with zero-dimensional defect types, especially native point defects in Si and GaAs.
Journal ArticleDOI

Directional growth method to obtain high quality polycrystalline silicon from its melt

TL;DR: In this article, a new concept for growing a polycrystalline silicon ingot suitable for solar cells by the casting method was proposed, which induced dendrite growth along the crucible wall in the initial stage of growth.
Journal ArticleDOI

Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals

TL;DR: In this paper, the results of a systematic study of mono-and poly-crystalline grain growth in directional solidification of silicon using different kinds of seed crystals were presented.
Journal ArticleDOI

Crystal growth kinetics

TL;DR: A review of crystal growth kinetics is presented, beginning with the first atomistic models and the development of our understanding of the cooperative processes involved in the formation of new crystal layers during growth and the central role played by surface roughness are reviewed as discussed by the authors.
Related Papers (5)