Journal ArticleDOI
Investigation of the short-circuit performance of an IGBT
Malay Trivedi,Krishna Shenai +1 more
TLDR
In this paper, the internal dynamics of insulated gate bipolar transistors (IGBT's) under short-circuit switching conditions were investigated with the aid of extensive measurements and numerical simulations, and it was shown that hot-spot generation due to current crowding and impact ionization is the cause of breakdown of an IGBT under short circuit switching.Abstract:
This paper reports the internal dynamics of insulated gate bipolar transistors (IGBT's) under short-circuit switching conditions. Short-circuit performance of IGBT's has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced two-dimensional (2-D) mixed device and circuit simulator that incorporates the self-heating mechanism has been employed to examine IGBT behavior under short-circuit stress. Latch-up free punchthrough IGBT has been examined. It is shown that hot-spot generation due to current crowding and impact ionization is the cause of breakdown of an IGBT under short-circuit switching.read more
Citations
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Journal ArticleDOI
A review of IGBT models
TL;DR: In this paper, the authors reviewed, analyzed, compared and classified IGBT models into different categories according to mathematical type, objectives, complexity, accuracy and speed, and some problems and trends in IGBT modeling are discussed.
Journal ArticleDOI
Short-Circuit Protection in a Converter-Fed Low-Voltage Distribution Network
TL;DR: In this article, the short-circuit protection of a low-power converter-fed lowvoltage dc distribution network is investigated, and the control scheme for the shortcircuit current control and the fault ride through operation is proposed.
Journal ArticleDOI
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions
TL;DR: In this article, the behavior of single-chip insulated gate bipolar transistors (IGBT) devices under repetitive short-circuit operations has been investigated and two distinct failure modes were identified depending on the dissipated energy during the tests.
Journal ArticleDOI
A study on the short-circuit capability of field-stop IGBTs
TL;DR: In this article, the short-circuit failure mechanism of 1200 V trench gate field-stop insulated gate bipolar transistor (IGBT) has been investigated and it has been determined that due to significantly large leakage current, thermal run-away can occur causing device failure after short circuit turn-off.
Journal ArticleDOI
Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress
Malay Trivedi,Krishna Shenai +1 more
TL;DR: In this paper, failure mechanisms during short-circuit and clamped inductive switching stress are investigated for latchup-free as well as latch-up-prone punchthrough IGBTs.
References
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Journal ArticleDOI
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
TL;DR: A treatment of the self-heating problem is presented, showing that, in the steady state, some of the heuristic models of heat generation, thermal conductivity, and heat capacity could indeed approximate the correct results within an error bound of 1-10%.
Journal ArticleDOI
An experimental and numerical study on the forward biased SOA of IGBTs
TL;DR: In this article, the authors investigated the thermal and electrical destructions of n-ch 600 V punchthrough type IGBTs in F.B.SOA and found that the cause of the thermal destruction is the thermal disappearance of built-in potential of p-n junction between the n/sup +/ emitter and the p base of the IGBT integral DMOSFET occurring at the critical temperature of /spl sim/650 K.
Journal ArticleDOI
Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs
TL;DR: In this article, the mechanisms of destructive failure of an insulated gate bipolar transistor (IGBT) at short-circuit state are discussed and results from two-dimensional numerical simulation of p-channel and n-channel IGBTs are presented.
Journal ArticleDOI
Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's
TL;DR: In this paper, the safe operating area (SOA) for non-latchup bipolar-mode MOSFETs was measured in terms of current density and drainvoltage product, reaching 2.5 × 105W/cm2.
Proceedings ArticleDOI
A study on the IGBT's turn-off failure and inhomogeneous operation
TL;DR: In this article, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations, and they also show that in a smaller operating area compared to a steady-state one, the IGBT fails to turn off.
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A discussion on IGBT short-circuit behavior and fault protection schemes
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Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress
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