Ionization of SiO2 by Heavy Charged Particles
T. R. Oldham,J.M. McGarrity +1 more
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TLDR
In this article, the amount of charge created by an alpha particle and proton is calculated and the yield of charqes which escape initial recombination is measured, and the experimental results are shown to agree with a charge recombination model where an ionization track radius of 30-40 A is assumed.Abstract:
Highly ionizing heavy charged particles generate significant charge as they pass through the thin thermally grown gate oxide of a MOSFET device. The amount of charge created by an alpha particle and proton is calculated and the yield of charqes which escape initial recombination is measured. The experimental results are shown to agree with a charge recombination model where an ionization track radius of 30-40 A is assumed. Finally, implications of the findings for single charged particle effects in submicron dimension devices are discussed.read more
Citations
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Total ionizing dose effects in MOS oxides and devices
T.R. Oldham,F.B. McLean +1 more
TL;DR: In this article, the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation, are discussed.
Journal ArticleDOI
Current and Future Challenges in Radiation Effects on CMOS Electronics
TL;DR: In this paper, the authors examine the impact of recent developments and the challenges they present to the radiation effects community and discuss future radiation effects challenges as the electronics industry looks beyond Moore's law to alternatives to traditional CMOS technologies.
Journal ArticleDOI
Radiation effects on microelectronics in space
J.R. Srour,J.M. McGarrity +1 more
TL;DR: The basic mechanisms of space radiation effects on microelectronics are reviewed in this article, including the effects of displacement damage and ionizing radiation on devices and circuits, single-event phenomena, dose enhancement, radiation effect on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment.
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Correlation of Particle-Induced Displacement Damage in Silicon
TL;DR: In this paper, the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons were compared to calculations of nonionizing energy deposition in silicon as a function of particle type and energy.
References
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Journal ArticleDOI
Charge-Carrier Transport Phenomena in Amorphous Si O 2 : Direct Measurement of the Drift Mobility and Lifetime
TL;DR: In this paper, the first direct measurement of the drift velocity of excess electrons is given as a function of applied field in amorphous Si${\mathrm{O}}_{2}$ using a transit-time technique.
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Electron−hole pair creation energy in SiO2
G. A. Ausman,F. B. McLean +1 more
TL;DR: In this paper, the average energy required to create an electron−hole pair in SiO2 has been determined to be approximately 18 eV by considering the energy loss of fast electrons in solids.
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Charge Yield and Dose Effects in MOS Capacitors at 80 K
H. E. Boesch,J. M. McGarrity +1 more
TL;DR: In this paper, the hole-electron pairs are generated in the SiO/sub 2/ insulating layer by ionizing radiation and the holes remain essentially immobile at or near their point of creation.
Journal ArticleDOI
Hole and electron transport in SiO2 films
TL;DR: In this paper, it was shown that the analysis used by various workers to determine the mobility lifetime (μτ) product for SiO2 is invalid and that the observed dependences of current on applied field can best be explained by geminate and/or columnar recombination.