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Linear optical properties in the projector-augmented wave methodology

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TLDR
In this paper, the authors derived closed expressions for the head of the frequency-dependent microscopic polarizability matrix in the projector-augmented wave (PAW) methodology, resulting in dielectric properties that are largely independent of the applied potentials.
Abstract
In this work we derive closed expressions for the head of the frequency-dependent microscopic polarizability matrix in the projector-augmented wave (PAW) methodology. Contrary to previous applications, the longitudinal expression is utilized, resulting in dielectric properties that are largely independent of the applied potentials. The improved accuracy of the present approach is demonstrated by comparing the longitudinal and transversal expressions of the polarizability matrix for a number of cubic semiconductors and one insulator, i.e., Si, SiC, AlP, GaAs, and diamond (C), respectively. The methodology is readily extendable to more complicated nonlocal Hamiltonians or to the calculation of the macroscopic dielectric matrix including local field effects in the random phase or density functional approximation, which is demonstrated for the previously mentioned model systems. Furthermore, density functional perturbation theory is extended to the PAW method, and the respective results are compared to those obtained by summation over the conduction band states.

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A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

TL;DR: A new silicon allotrope with a direct band gap of 0.61 eV is proposed, which is dynamically, thermally and mechanically stable and a promising material for optoelectronic applications.
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First-principles study of self-trapped holes and acceptor impurities in Ga 2 O 3 polymorphs

TL;DR: In this article, the stability of self-trapped holes and acceptor levels of substitutional Mg and N impurities were investigated using first-principles calculations based on the hybrid functional approach to assess their dopability.
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PdSe2: Flexible Two-Dimensional Transition Metal Dichalcogenides Monolayer for Water Splitting Photocatalyst with Extremely Low Recombination Rate

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V-doped SnS2: a new intermediate band material for a better use of the solar spectrum

TL;DR: The insertion of vanadium in SnS(2) with Sn partially substituted by vanadium is found to produce an absorption spectrum in the UV-Vis-NIR range that displays a new sub-bandgap feature in agreement with the quantum calculations.
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Putting the Squeeze on Lead Iodide Perovskites: Pressure-Induced Effects To Tune Their Structural and Optoelectronic Behavior.

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