Journal ArticleDOI
Logarithmic gain/current-density characteristic of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement-heterostructure lasers
TLDR
In this paper, the threshold current density of InGaAs/InGaAIAs/INP SCH MQW lasers with various cavity lengths and numbers of wells has been measured.Abstract:
The threshold current density of InGaAs/InGaAIAs/InP SCH MQW lasers with various cavity lengths and numbers of wells has been measured. The gain of each well depends logarithmically on current density from 200 to at least 2000 A cm−2. Curves are presented for optimising the number of wells. Comparisons are made with GaAs/AIGaAs MQW lasers.read more
Citations
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Journal ArticleDOI
Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
TL;DR: In this paper, the progress in longwavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed.
Journal ArticleDOI
Long-wavelength monolithic mode-locked diode lasers
TL;DR: In this paper, a detailed study of the design issues relevant to long-wavelength monolithic mode-locked laser diodes is presented, and a validated travelling wave model is devised to explore the limits of mode-locking in monolithic laser dodes, not only in terms of pulse duration and repetition rate, but also in term of stability.
Journal ArticleDOI
Dynamics of monolithic passively mode-locked semiconductor lasers
TL;DR: In this paper, a large signal dynamic computer model was used to compare the performance of CPM and self-colliding pulse mode-locking (SCPM) in semiconductor laser devices.
Journal ArticleDOI
On the semiconductor laser logarithmic gain-current density relation
T. A. DeTemple,C. M. Herzinger +1 more
TL;DR: In this paper, a simplified relation between material gain alpha and current density J is shown to be a very good shape approximation, for quantum wells and bulk materials, essentially independent of the type of recombination processes present.
Journal ArticleDOI
Analytical formulas for the optical gain of quantum wells
TL;DR: In this paper, the quantized energy levels in quantum wells, the optical gain, the differential optical gain and the linewidth enhancement factor are presented based on a simple parabolic-band gain model.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
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On the semiconductor laser logarithmic gain-current density relation
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