Journal ArticleDOI
Low threshold half-wave vertical-cavity lasers
TLDR
In this paper, the authors characterized half-wavelength vertical-cavity surface-emitting laser defined by a nativeoxide ring in which the native oxide is 200 A from the single quantum well.Abstract:
Data are presented characterising half-wavelength vertical-cavity surface-emitting lasers defined by a native-oxide ring in which the native oxide is 200 A from the single quantum well. The lowest threshold is achieved with a 2 µm square active region, with a minimum threshold current of 91 µA continuous-wave at room temperature.read more
Citations
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Journal ArticleDOI
Surface-emitting laser-its birth and generation of new optoelectronics field
TL;DR: In this article, the progress of the surface emitting laser and the vertical-cavity surface-emitting laser (VCSEL), covering the spectral band from infrared to ultraviolet by featuring its physics, materials, fabrication technology, and performances, such as threshold, output powers, polarizations, linewidth, modulation, reliability, and so on.
Journal ArticleDOI
Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
TL;DR: In this paper, the InGaAs single quantum well vertical-cavity surface-emitting laser with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs).
Journal ArticleDOI
Effective index model for vertical-cavity surface-emitting lasers
TL;DR: It is shown that the effective index responsible for waveguiding is dependent only on lateral changes in the Fabry-Perot resonance frequency, which leads naturally to new design methods for these lasers that are expected to result in more effective devices with superior modal characteristics.
Journal ArticleDOI
Advances in selective wet oxidation of AlGaAs alloys
Kent D. Choquette,Kent M. Geib,Carol I. H. Ashby,R. D. Twesten,O. Blum,Hong Q. Hou,David M. Follstaedt,B.E. Hammons,D. T. Mathes,Robert Hull +9 more
TL;DR: In this article, the chemistry, microstructure, and processing of buried oxides converted from AlGaAs layers using wet oxidation was reviewed and the influence of gas flow, gas composition, temperature, Al-content, and layer thickness on the oxidation rate was characterized.
Patent
Light Emitting Device
TL;DR: By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organics layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathodes, and transmission of the injected electrons can also be performed with good efficiency as discussed by the authors.
References
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Journal ArticleDOI
Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers
TL;DR: In this article, a new process for fabrication of vertical-cavity surface-emitting laser based on the selective conversion of high-Al composition epitaxial AlGaAs to a stable native oxide using "wet oxidation" is presented.
Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Native oxide top‐ and bottom‐confined narrow stripe p‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser
TL;DR: In this article, a new form of AlyGa1−yAs−GaAs•InxGa 1−xAs laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated.
Journal ArticleDOI
Role of waveguide light emission in planar microcavities
C.C. Lin,Dennis G. Deppe,C. Lei +2 more
TL;DR: In this article, the role of light emission into waveguide modes of planar microcavities is elucidated through the calculation of the emission characteristics in various structures, including dielectric Bragg reflectors.
Journal ArticleDOI
Record Low Threshold Current in Microcavity Surface-Emitting Laser
Takahiro Numai,T. Kawakami,Takashi Yoshikawa,Mitsunori Sugimoto,Yoshimasa Sugimoto,Hiroyuki Yokoyama,Kenichi Kasahara,Kiyoshi Asakawa +7 more
TL;DR: In this paper, a microcavity surface-emitting laser with a 5µm-diameter airpost was demonstrated to achieve a low threshold current of 190 µA in a pulsed operation with no heat sink.