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Journal ArticleDOI

Magnetic bound states in SmB6

Peter S. Riseborough
- 01 Oct 2000 - 
- Vol. 9, Iss: 9, pp 813-820
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TLDR
In this article, the inelastic neutron scattering spectra of heavy fermion semiconductors were examined in the context of the indirect hybridization gap model and the in-gap features were identified as excitations of magnetic bound states, which are induced by residual anti-ferromagnetic interactions between the renormalized quasi-particles.
Abstract
The heavy fermion semiconductors such as Ce3Bi4Pt3, YbB12, and SmB6 may be modeled as indirect hybridization gap semiconductors. The magnitudes of the gap are smaller than the gaps predicted by local density functional electronic structure calculations, suggesting strong renormalizations due to electronic correlations. The inelastic neutron scattering spectra Im[χ(q,ω)] are examined within the context of this model. Anomalously sharp and temperature dependent peaks are seen at energies within the indirect gap in the inelastic neutron scattering experiments on SmB6 and YbB12 The in-gap features are identified as excitations of magnetic bound states, which are induced by residual anti-ferromagnetic interactions between the renormalized quasi-particles.

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Journal ArticleDOI

Collapse of the coherence gap in Kondo semiconductors

TL;DR: In this paper, the Anderson lattice model at half filling was applied to the mixed-valent Kondo semiconductor and the impurity concentration dependence of the gap and the spin-exciton features were investigated.
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Quantum spin fluctuations in the bulk insulating state of pure and Fe-doped SmB 6

TL;DR: In this paper, the bulk magnetic properties of pure and Fe-doped intermediate-valence compound (SmB 6 ) were investigated by muon spin rotation/relaxation methods.
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Topological nonmagnetic impurity states in topological Kondo insulators

TL;DR: In this article, the presence of nonmagnetic impurities in a hybridization gap model of a Kondo insulator which has band inversion was examined and it was shown that these in-gap states are caused by band-inversion and have properties similar to those expected for impurity in a topological insulator.
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Kondo-hole conduction in the La-doped Kondo insulator Ce 3 Bi 4 Pt 3

TL;DR: In this paper, the resistivity, Hall constant, specific heat, and magnetic susceptibility of the doped Kondo insulator were studied as a function of temperature and the number of atoms in the alloy.
Journal ArticleDOI

Momentum microscopy of single crystals with detailed surface characterisation

TL;DR: In this article, the in situ preparation of surfaces of the proposed topological Kondo insulator SmB by controlled cycles of Ar ion sputtering and annealing is described.
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