Proceedings ArticleDOI
Measurement and Analysis of Multiple Output Transient Propagation in BJT Analog Circuits
Nicolas J.-H. Roche,Ani Khachatrian,J. H. Warner,S. P. Buchner,Dale McMorrow,D. A. Clymer +5 more
- Vol. 63, Iss: 4, pp 1986-1994
TLDR
In this paper, the propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported.Abstract:
The propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported for the first time. The results demonstrate that ASETs can appear at several outputs of a BJT amplifier or comparator as a result of a single ion or single laser pulse strike at a single physical location on the chip of a large-scale integrated BJT analog circuit. This is independent of interconnect cross-talk or charge-sharing effects. Laser experiments, together with SPICE simulations and analysis of the ASET’s propagation in the s-domain are used to explain how multiple-output transients (MOTs) are generated and propagate in the device. This study demonstrates that both the charge collection associated with an ASET and the ASET’s shape, commonly used to characterize the propagation of SETs in devices and systems, are unable to explain quantitatively how MOTs propagate through an integrated analog circuit. The analysis methodology adopted here involves combining the Fourier transform of the propagating signal and the current-source transfer function in the s-domain. This approach reveals the mechanisms involved in the transient signal propagation from its point of generation to one or more outputs without the signal following a continuous interconnect path.read more
Citations
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Investigations on TID-ASETs Synergistic Effect in LM124 Operational Amplifier From Three Different Manufacturers
Fabien Roig,Laurent Dusseau,Ani Khachatrian,Nicolas Roche,A. Privat,J.-R. Vaille,Jerome Boch,J. H. Warner,Frédéric Saigné,S. P. Buchner,Dale McMorrow,P. Ribeiro,G. Auriel,B. Azais,R. Marec,P. Calvel,Francoise Bezerra,Robert Ecoffet +17 more
TL;DR: The synergistic effect between Total Ionizing Dose and Analog Single Event Transient (ASET) in LM124 operational amplifiers (opamps) from three different manufacturers is investigated and excellent agreement is observed between the experimental responses and the model outputs.
Journal ArticleDOI
Analysis of Single-Event Transients (SETs) Using Machine Learning (ML) and Ionizing Radiation Effects Spectroscopy (IRES)
TL;DR: Results show that SETs can be automatically identified by the kNN models, with several features resulting in greater than 98% correct identification of SETs.
Proceedings ArticleDOI
The differential and differential difference operational amplifiers of sensor systems based on bipolar-field technological process AGAMC
TL;DR: In this paper, the authors present the architectures of the operational amplifiers (OA), implemented on the basis on bipolar and field transistors, and the basic circuits of the DDA, based on the analog gate-array master chip AGAMC (OJSC "Integral", Minsk) with low offset voltages.
Proceedings ArticleDOI
Software and hardware complex for studying semiconductor devices at low, incl. cryogenic, temperatures
TL;DR: The article considers measurement techniques, software features and an experimental setup that allow determining the main parameters of analog integrated circuits (IC), bipolar transistor (BiT) and junction field effect transistors (JFET) at low temperatures up to the liquid nitrogen temperature.
Journal ArticleDOI
Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
Andres Fontana,Sebastian M. Pazos,Fernando L. Aguirre,Nahuel Vega,Nahuel Muller,Emmanuel De La Fourniere,Fernando Silveira,M.E. Debray,Felix Palumbo +8 more
TL;DR: In this article, charge sharing effects on analog single-event transients are experimentally observed in a fully custom designed, 180-nm complementary metal-oxide-semiconductor (CMOS) operational amplifier by means of a heavy-ion microbeam.
References
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Journal ArticleDOI
Charge Collection and Charge Sharing in a 130 nm CMOS Technology
O.A. Amusan,Arthur F. Witulski,Lloyd W. Massengill,Bharat L. Bhuva,P.R. Fleming,Michael L. Alles,A.L. Sternberg,Jeffrey D. Black,Ronald D. Schrimpf +8 more
TL;DR: In this paper, the authors examined key parameters affecting charge sharing and quantified relative collected charge at the hit node and adjacent nodes, and showed that for a twin-well CMOS process, PMOS charge sharing can be effectively mitigated with the use of contacted guard-ring, whereas a combination of contact guard ring, nodal separation and interdigitation is required to mitigate the NMOS charge-sharing effect for the technology studied.
Journal ArticleDOI
Substrate crosstalk reduction using SOI technology
TL;DR: In this paper, the authors analyzed both by simulations and measurements the substrate crosstalk performances of various Silicon-On-Insulator (SOI) technologies, and compared them to those of normal bulk CMOS process.
Journal ArticleDOI
Analysis of single-event transients in analog circuits
P.C. Adell,Ronald D. Schrimpf,Hugh J. Barnaby,R. Marec,C. Chatry,P. Calvel,C. Barillot,O. Mion +7 more
TL;DR: In this article, a new methodology for understanding single-event transient (SET) phenomena in analog circuits is described, where device and circuit simulation techniques are coupled in order to reproduce experimental data obtained from the National Semiconductor LM124 operational amplifier and to determine the most sensitive parts of the integrated circuit.
Journal ArticleDOI
Observation of single event upsets in analog microcircuits
R. Koga,S.D. Pinkerton,Steven C. Moss,D.C. Mayer,Stephen LaLumondiere,S.J. Hansel,K.B. Crawford,W.R. Crain +7 more
TL;DR: In this paper, the OP-15 operational amplifier has been found to be susceptible to single event upsets in the laboratory and has also experienced upset in space, and possible strategies for mitigating the occurrence of analog SEUs in space are also discussed.
Journal ArticleDOI
Three-dimensional mapping of single-event effects using two photon absorption
Dale McMorrow,W.T. Lotshaw,Joseph S. Melinger,S. P. Buchner,Y. Boulghassoul,Lloyd W. Massengill,R.L. Pease +6 more
TL;DR: In this paper, carrier generation based on subbandgap two-photon absorption is used to perform three-dimensional mapping of the single-event transient response of the LM124 operational amplifier.