Journal ArticleDOI
Measurement of high-field electron transport in silicon carbide
Idrees A. Khan,James A. Cooper +1 more
TLDR
In this paper, the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field was measured and the dependence of low field mobility and saturated drift velocity on temperature were also reported.Abstract:
We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field. The dependence of the low field mobility and saturated drift velocity on temperature are also reported. The saturated drift velocities at room temperature are approximately 1.9/spl times/10/sup 7/ cm/s in 6H-SiC and 2.2/spl times/10/sup 7/ cm/s in 4H-SiC.read more
Citations
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Journal ArticleDOI
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
M. Roschke,Frank Schwierz +1 more
TL;DR: In this article, the electron mobility in the three most important silicon carbide (SiC) polytypes, namely, 4H, 6H, and 3C SiC are developed.
Journal ArticleDOI
SiC and GaN transistors - is there one winner for microwave power applications?
TL;DR: Improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes.
Journal ArticleDOI
A Physical Model of High Temperature 4H-SiC MOSFETs
Siddharth Potbhare,Neil Goldsman,Aivars J. Lelis,J. M. McGarrity,F. B. McLean,Daniel B. Habersat +5 more
TL;DR: In this article, a comprehensive physical model for the analysis, characterization, and design of 4H-silicon carbide (SiC) MOSFETs has been developed.
Journal ArticleDOI
Bulk GaN and AlGaN∕GaN heterostructure drift velocity measurements and comparison to theoretical models
TL;DR: In this paper, the room temperature velocity-field characteristics for n-type gallium nitride and AlGaN∕GaN heterostructures, grown epitaxially on sapphire, were determined experimentally.
Journal ArticleDOI
Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators
TL;DR: It is theoretically and experimentally demonstrated that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q) in PS-BAW resonators.
References
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Journal ArticleDOI
Conductivity Anisotropy in Epitaxial 6H and 4H Sic
TL;DR: In this article, a measure of the electron mobility anisotropy in n-type 4H and 6H-SiC has been obtained using the Hall effect over the temperature range 80K
Journal ArticleDOI
Saturated electron drift velocity in 6H silicon carbide
W. v. Muench,E. Pettenpaul +1 more
TL;DR: In this paper, the saturated electron drift velocity has been measured in epitaxial 6H silicon carbide layers at an electric field of approximately 2×105 V/cm, i.e., a factor of 2 higher than in silicon.
Journal ArticleDOI
Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T
TL;DR: In this article, the Hall scattering coefficient rH determines the relationship between the measurable Hall coefficient RH and the free carrier concentration, and reliable knowledge of rH is necessary for the precise interpretation of Hall measurements and to validate theoretical transport calculations.