Journal ArticleDOI
SiC and GaN transistors - is there one winner for microwave power applications?
Robert J. Trew
- Vol. 90, Iss: 6, pp 1032-1047
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TLDR
Improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes.Abstract:
Wide bandgap semiconductors show promise for high-power microwave electronic devices. Primarily due to low breakdown voltage, it has not been possible to design and fabricate solid-state transistors that can yield radio-frequency (RF) output power on the order of hundreds to thousands of watts. This has severely limited their use in power applications. Recent improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes. The most promising electronic devices for fabrication in wide bandgap semiconductors for these applications are metal-semiconductor field-effect transistors (MESFETs) fabricated from the 4H-SiC polytype and heterojunction field-effect transistors (HFETs) fabricated using the AlGaN/GaN heterojunction. These devices can provide RF output power on the order of 5-6 W/mm and 10-12 W/mm of gate periphery, respectively. 4H-SiC MESFETs should produce useful performance at least through X band and AlGaN/GaN HFETs should produce useful performance well into the millimeter-wave region, and potentially as high as 100 GHz.read more
Citations
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Journal ArticleDOI
Silicon carbide and diamond for high temperature device applications
TL;DR: The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates as mentioned in this paper.
Journal ArticleDOI
Wide-bandgap semiconductor materials: For their full bloom†
TL;DR: In this paper, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their?full bloom? and other widebandgap materials such as diamond and oxides are attracting focusing interest due to their promising functions especially for power devices.
Journal ArticleDOI
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
TL;DR: In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented, revealing clear mechanisms of current collapse and related dispersion effects.
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[Award for Best Review Paper Speech](30min.)Wide-Bandgap Semiconductor Materials: For Their Full Bloom
TL;DR: In this paper, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their?full bloom? and other widebandgap materials such as diamond and oxides are attracting focusing interest due to their promising functions especially for power devices.
Journal ArticleDOI
A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices
TL;DR: In this article, a physics-based analytical model for 2D electron gas density ns in AlGaN/GaN high-electron mobility transistors is presented, which accounts for the interdependence between Fermi level Ef and ns.
References
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Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
Journal ArticleDOI
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
Journal ArticleDOI
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.
Journal ArticleDOI
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Steven C. Binari,K. Ikossi,J.A. Roussos,Walter Kruppa,Doewon Park,Harry B. Dietrich,Daniel D. Koleske,Alma Wickenden,R. L. Henry +8 more
TL;DR: In this article, the dc small-signal and microwave power output characteristics of AlGaN/GaN HEMTs are presented, and it is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer.
Journal ArticleDOI
Very-high power density AlGaN/GaN HEMTs
TL;DR: A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.