Journal ArticleDOI
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of and crystal orientation at high electric fields
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TLDR
In this article, a new set of parameters for the mobility as function of temperature and electric field for planar p+nn+ diodes in the temperature range between −30°C and 50°C were presented.Abstract:
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for 〈1 1 1〉 and 〈1 0 0〉 crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p+nn+ diodes in the temperature range between −30 °C and 50 °C and electric fields of 2 × 103 V/cm to 2 × 104 V/cm.read more
Citations
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Operation and performance of the ATLAS Semiconductor Tracker
TL;DR: The Semiconductor Tracker (SCT) as discussed by the authors is a key component of the ATLAS Inner Detector, which is used to track charged particles in the region around the point where proton-proton collisions occur.
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Charge losses in segmented silicon sensors at the Si–SiO2 interface
TL;DR: In this paper, the charge collection of p + n silicon strip sensors for electron-hole pairs produced close to the Si-SiO 2 interface by a focussed sub-nanosecond laser with a wavelength of 660nm has been investigated.
Journal ArticleDOI
(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation
Chadwin D. Young,Kerem Akarvardar,Kerem Akarvardar,Mehmet Onur Baykan,Mehmet Onur Baykan,Ken Matthews,Injo Ok,T. Ngai,K.-W. Ang,J. Pater,Casey Smith,Muhammad Mustafa Hussain,Prashant Majhi,Chris Hobbs +13 more
TL;DR: In this paper, the performance and reliability of (1,0,0) and (1, 1, 0) sidewall, silicon-on-insulator (SOI) FinFETs with a Hfbased gate dielectric were evaluated.
Journal ArticleDOI
Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science
Julian Becker,Mark W. Tate,Katherine S. Shanks,Hugh T. Philipp,Joel T. Weiss,Prafull Purohit,Darol Chamberlain,Jacob Ruff,Sol M. Gruner +8 more
TL;DR: In this article, the authors presented characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory.
Journal ArticleDOI
Simulation study of the impact of AGIPD design choices on X-ray Photon Correlation Spectroscopy utilizing the intensity autocorrelation technique
TL;DR: In this paper, a case study for the Adaptive Gain Integrating Pixel Detector (AGIPD) at the European XFEL employing the intensity autocorrelation technique was performed using the detector simulation tool HORUS.
References
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MINUIT-a system for function minimization and analysis of the parameter errors and correlations
F. James,Matts Roos +1 more
TL;DR: Title of program: MINUIT gating the shape of the function near the minimum to determine the errors, in this essentially statistical problem the Catalogue number: ACWH function involved is usually a chisquare or negative log-likeli
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Currents Induced by Electron Motion
TL;DR: In this article, the instantaneous current induced in neighboring conductors by a given specified motion of electrons is computed based on the repeated use of a simple equation giving the current due to a single electron's movement.
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A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
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Intrinsic concentration, effective densities of states, and effective mass in silicon
TL;DR: In this paper, an inconsistency between commonly used values of the silicon intrinsic carrier concentration, the effective densities of states in the conduction and valence bands, and the silicon band gap is resolved by critically assessing the relevant literature.
Journal ArticleDOI
Drift velocity of electrons and holes and associated anisotropic effects in silicon
TL;DR: In this article, the drift velocity of electrons and holes in high purity silicon has been measured, with the time of flight technique, as a function of electric field (0·1−50 KV/cm) at several temperatures between 77 and 300°K.