Journal ArticleDOI
Mechanism of thermoluminescence in AlN:O
TLDR
In this article, two mechanisms are proposed for the release of charges due to thermal ionization of the centres and migration of charges on the impurity centres, and the probability of the occurrence of impurity migration is discussed.Abstract:
Thermoluminescence of AlN: O in the 80–420 K temperature range is described. Two mechanisms are proposed for its explanation: the release of charges due to thermal ionization of the centres and migration of charges on the impurity centres. The probability of the occurrence of impurity migration is discussed.read more
Citations
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Impurity Conduction at Low Concentrations.
TL;DR: In this article, the conductivity of an n-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$.
Journal ArticleDOI
Trap spectroscopy by the fractional glow technique
TL;DR: In this paper, a theory of the fractional glow technique (FGT) for an arbitrary heating regime and first-order recombination kinetics is developed, where the mean activation energy, the mean frequency factor, the recombination intensity, and the FGT energy spectrum as the TDF image in activation energy scale are presented.
Journal ArticleDOI
Overview of band-edge and defect related luminescence in aluminum nitride
TL;DR: In this paper, the authors present an overview of the published results describing near band-edge and defect related luminescence in aluminum nitride, also presenting findings from theoretical reports investigating band-structure, intrinsic defects or foreign impurities.
Journal ArticleDOI
Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics
TL;DR: The structure of oxygen-related luminescence centres in nominally undoped and Y 2 O 3 doped AlN ceramics was investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR as discussed by the authors.
Journal ArticleDOI
Effect of swift heavy ion irradiations in polycrystalline aluminum nitride
TL;DR: In this paper, specimens were irradiated with swift heavy ions of different energies then characterized by both thermally stimulated luminescence and optical absorption spectrophotometry, and the native defects, as well as those affected by irradiation, were identified.
References
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Journal ArticleDOI
Impurity Conduction at Low Concentrations
A. J. Miller,Elihu Abrahams +1 more
TL;DR: In this paper, the conductivity of an n-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$.
Journal ArticleDOI
Spectroscopy of traps by fractional glow technique
H. Gobrecht,D. Hofmann +1 more
TL;DR: In this paper, the average depth of those traps which are preferentially emptied at any time in the course of the glow curve if a large number of small temperature oscillations is superposed on the uniform warming (fractional glow technique) is used.
Journal ArticleDOI
Electron-Capture ("Internal") Luminescence from the Oxygen Donor in Gallium Phosphide
P. J. Dean,Charles H. Henry +1 more
TL;DR: In this paper, the infrared radiative capture of electrons at ionized oxygen donors in gallium phosphide was reported. But the authors did not consider the effect of phonon-assisted transitions.
Journal ArticleDOI
Optical Absorption Edge of AIN Single Crystals
J. Pastrňák,L. Roskovcová +1 more
TL;DR: From measurements of the absorption coefficient of AIN single crystals, the direct band gap values EG = (5.88 ± 0.05) eV and EG = 5.74 ± 1.05 eV for E ⟂ c and E ∥ c, respectively, are determined as mentioned in this paper.