Patent
Memory cell with radial barrier
Paul E. Anderson,Song Xue +1 more
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TLDR
In this article, a radially protective layer extending proximate at least the ferromagnetic free layer of the cell is proposed to enhance the effective magnetic properties of the free layer, including effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.Abstract:
Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.read more
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Patent
Magnetoresistive element and method of manufacturing the same
Masahiko Nakayama,Masatoshi Yoshikawa,Tadashi Kai,Yutaka Hashimoto,Masaru Toko,Hiroaki Yoda,Jae Geun Oh,Lee Keum Bum,Choon Kun Ryu,Hyung Suk Lee,Sook Joo Kim +10 more
TL;DR: In this paper, a magnetoresistive element is disclosed, which includes a reference layer, a tunnel barrier layer, and a storage layer, including a first region and a second region provided outside the first region, the second region including element included in the first regions and another element being different from the element.
Patent
Spin torque transfer memory cell structures and methods
TL;DR: In this paper, a spin torque transfer (STT) memory cell structure and methods are described, where one or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinion material in contact with an antiferromagnetic material.
Patent
Strain induced reduction of switching current in spin-transfer torque switching devices
TL;DR: Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/strain on an MTJ to increase the perpendicular magnetic aisotropic.
Patent
Perpendicular magnetic tunneling junction (mtj) for improved magnetoresistive random-access memory (mram) process
Wen-Chun You,Kuo-Chi Tu,Chih-Yang Chang,Hsia-Wei Chen,Chin-Chieh Yang,Shih Sheng-Hung,Wen-Ting Chu,Yu-Wen Liao +7 more
TL;DR: In this paper, a method of forming a magnetoresistive random access memory (MRAM) device including a perpendicular MTJ (magnetic tunnel junction) is provided, which includes forming a magnetic tunneling junction (MTJ) over a bottom electrode layer.
Patent
Magnetic stack design
TL;DR: In this paper, an annular antiferromagnetic pinning layer was electrically isolated from the free layer and in physical contact with the reference layer in a magnetic stack with a switchable magnetization orientation.
References
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Journal ArticleDOI
Current-driven excitation of magnetic multilayers
TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
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Ordered Metal Nanohole Arrays Made by a Two-Step Replication of Honeycomb Structures of Anodic Alumina
Hideki Masuda,Kenji Fukuda +1 more
TL;DR: A highly ordered metal nanohole array (platinum and gold) was fabricated by a two-step replication of the honeycomb structure of anodic porous alumina that showed a notable color change compared with bulk gold.
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Emission of spin waves by a magnetic multilayer traversed by a current.
TL;DR: In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.
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New Class of Materials: Half-Metallic Ferromagnets
TL;DR: The band structure of Mn-based Heusler alloys of the crystal structure (MgAgAs type) has been calculated with the augmented-spherical-wave method.
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High‐Aspect‐Ratio TiO2 Nanotubes by Anodization of Titanium
TL;DR: It is demonstrated for the first time how high-aspectratio, self-organized, TiO2 films can be grown by tailoring the electrochemical conditions during titanium anodization by controlling the self-induced acidification of the pore bottom that is caused by the electro chemical dissolution of the metal.