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Journal ArticleDOI

Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2 with High Haze Factors

TLDR
In this article, the microstructures of µc-Si films on textured SnO2 with different haze factors (from 13% to 65%) were observed with a scanning electron microscope and a transmission electron microscope.
Abstract
Microcrystalline silicon (µc-Si) films and solar cells were prepared by mercury-sensitized photochemical vapor deposition (photo-CVD). The changes in the structural properties of a series of µc-Si films grown under various H2 dilution and deposition pressure conditions were discussed. The results indicated that the properties of µc-Si films depend strongly on the atomic hydrogen. The microstructures of µc-Si films on textured SnO2 with different haze factors (from 13% to 65%) were observed with a scanning electron microscope and a transmission electron microscope. The observations revealed that the µc-Si layers grew from the initial stage of deposition with columnar grains and that they were conformal to the surface of textured SnO2. The grain boundary density of µc-Si film on SnO2 with higher haze factors was lower than that on SnO2 with lower haze factors. The effect of textured SnO2 with different haze ratios on p–i–n µc-Si cell characteristics was discussed and it was found that the higher haze factors showed a higher degree of light trapping in our µc-Si cells. We deposited µc-Si cells with an intrinsic µc-Si layer thickness of 430 nm on a textured SnO2 sample with a haze factor of 42% and achieved a conversion efficiency of 6.55%.

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Citations
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Journal ArticleDOI

Highly efficient dye-sensitized solar cells: progress and future challenges

TL;DR: In this paper, the major progress of improving the energy conversion efficiency of dye-sensitized solar cells (DSCs) which may be useful for future applications is selectively reviewed, and a roadmap of possible future directions of DSCs with the challenges of how to further improve the efficiency to accelerate the progress in the commercialization of DSCs is illustrated.
Journal ArticleDOI

Improvement of efficiency of dye-sensitized solar cells based on analysis of equivalent circuit

TL;DR: In this article, the principle of dye-sensitized solar cells (DSCs) in terms of a new physics-based equivalent circuit model was discussed, and the highest efficiency scores of 10.4% and 10.8% (aperture illumination area 1.004 cm2 and 0.2227 cm2, respectively) were confirmed by a public test center.
Journal ArticleDOI

Effective light trapping in thin film silicon solar cells from textured Al doped ZnO substrates with broad surface feature distributions

TL;DR: In this paper, a multi-step process was used to make aluminum-doped ZnO (AZO) films with a wide range distribution of textures for light trapping in thin film silicon solar cells, which includes AZO deposition, HCl etching, AZO re-deposition, and HCl re-etching.
Journal ArticleDOI

Effect of perforated transparent electrodes on light transmittance and light scattering in substrates used for microcrystalline silicon thin-film solar cells

TL;DR: In this article, the effect of perforated transparent electrodes on light transmittance and light scattering was studied using textured ZnO:Ga formed by wet etching.
Journal ArticleDOI

Organic-acid texturing of transparent electrodes toward broadband light trapping in thin-film solar cells

TL;DR: In this paper, an organic acid for the surface texturing of ZnO:Al is introduced as an alternative to the conventional HCl etchant, making more efficient light scattering by TCO.
References
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Journal ArticleDOI

Roles of Atomic Hydrogen in Chemical Annealing

TL;DR: In this article, the role of atomic hydrogen in chemical annealing is revealed, where the deposition of a thin layer and treatment with atomic hydrogen are repeated alternately, for the fabrication of a stable structure.
Journal ArticleDOI

High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method

TL;DR: In this article, the hot wire (HW) cell method has been successfully applied to grow polycrystalline silicon films at low temperatures with a relatively high growth rate of 0.9-1.1 nm/s.
Journal ArticleDOI

Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures

TL;DR: In this article, the lattice constant of the epitaxial Si films was expanded by the H atoms and this lattice expansion occurred only in a direction normal to the surface.
Journal ArticleDOI

High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane

TL;DR: In this article, a hot wire cell method was developed and successfully used to grow polycrystalline silicon thin films at a low-temperature and high deposition rate, where reactant gases are decomposed by a heated tungsten filament.
Journal ArticleDOI

Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures

TL;DR: In this paper, the growth mechanism of Si epitaxial film at low temperatures on Si(100) by photochemical vapor deposition (photo-CVD) is analyzed theoretically by using reaction models both in the gas phase and on the surface.
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