Journal ArticleDOI
Microstructural and compositional characterisation of Electronic Materials
D.V. Sridhara Rao,R. Sankarasubramanian,Deepak Kumar,Singh,K Mahadeva Bhat,Puspashree Mishra,Seema Vinayak,T. Srinivasan,Ruchi Tyagi,K. Muraleedharan,Rangarajan Muralidharan,Dibyajyoti Banerjee +11 more
TLDR
In this paper, electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InAs and GaN nanowires.Abstract:
Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT) and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, in-situ SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented.read more
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Journal ArticleDOI
Quantitative analysis of backscattered electron (BSE) contrast using low voltage scanning electron microscopy (LVSEM) and its application to Al0.22Ga0.78N/GaN layers.
A. Garitagoitia Cid,A. Garitagoitia Cid,Rüdiger Rosenkranz,Markus Löffler,André Clausner,Yvonne Standke,Ehrenfried Zschech,Ehrenfried Zschech +7 more
TL;DR: The parameters for BSE imaging in Low Voltage Scanning Electron Microscopy (LVSEM) are optimized for the layer system Al0.22Ga0.78N/GaN, which is typically used in High Electron Mobility Transistors (HEMTs).
References
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Book
Quantum dot heterostructures
TL;DR: In this paper, the growth and structural characterisation of self-organized Quantum Dots are discussed. But they do not consider the model of ideal and real quantum Dots.
Journal ArticleDOI
Evaluation of the fundamental properties of quantum dot infrared detectors
TL;DR: In this paper, the physical properties of detectors based on intraband optical absorption in quantum dots are described and examined in the interest of providing a competitive alternative infrared (IR) detector technology, where quantum dot detectors are an extension of quantum well infrared photodetectors and are expected to have a large performance advantage.
Book
Gallium arsenide : materials devices and circuits
M. J. Howes,D. V. Morgan +1 more
TL;DR: The Physical and Electronic Properties of GaAs Growth of Bulk GaAs Epitaxial Growth of GAAs Etching and Surface Preparation of GaAS for Device Fabrication Ion Implantation and Damage in GaAs Metallizations for GaAs Devices and Circuits Metal-Insulator-GaAs Structures Transferred Electron Devices GaAs IMPATT Diodes GaAs MESFETs GaAs Optoelectronic Devices GaAS Microwave Monolithic Circuits GaAs Digital Integrated Circuit Technology Index
Journal ArticleDOI
On the origin of threading dislocations in GaN films
Michelle A. Moram,C. S. Ghedia,D. V. S. Rao,Jonathan S. Barnard,Y. Zhang,Menno J. Kappers,Colin J. Humphreys +6 more
TL;DR: A series of GaNfilms were grown by metalorganic vapor phase epitaxy on nitrided sapphire using an initial annealed low-temperature nucleation layer (LT-NL), without employing any conventional threading dislocation (TD) reduction methods as mentioned in this paper.