BookDOI
Microwave Circuit Design Using Linear and Nonlinear Techniques: Vendelin/Microwave Circuit Design Using Linear and Nonlinear Techniques
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In this article, Leeson presented a model of Gummel-Poon Bipolar Transistor Model for MMIC requirements and proposed a two-port network with linear two-ports.Abstract:
Foreword by David Leeson. Preface. 1. RF/Microwave Systems. 2. Lumped and Distributed Elements. 3. Active Devices. 4. Two-Port Networks. 5. Impedance Matching. 6. Microwave Filters. 7. Noise in Linear Two-Ports. 8. Small- and Large-Signal Amplifier Design. 9. Power Amplifier Design. 10. Oscillator Design. 11. Microwave Mixer Design. 12. RF Switches and Attenuators. 13. Microwave Computer-Aided Workstations foor MMIC Requirements. Appendix A: BIP: Gummel-Poon Bipolar Transistor Model. Appendix B: Level 3 MOSFET. Appendix C: Noise Parameters of GaAs MESFETs. Appendix D: Derivations for Unilateral Gain Section. Appendix E: Vector Representation of Two-Tone Intermodulation Products. Appendix F: Passive Microwave Elements. Index.read more
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Journal ArticleDOI
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
TL;DR: Examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing are described.
Proceedings Article
The invariance of characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge) (Bi)CMOS high-speed building blocks
Timothy O. Dickson,K.H.K. Yau,T. Chalvatzis,A. Mangan,E. Laskin,R. Beerkens,P. Westergaard,M. Tazlauanu,Ming-Ta Yang,Sorin P. Voinigescu +9 more
TL;DR: Evidence is provided that, as a result of constant-field scaling, the peak fT, peak fMAX, and optimum noise figure NFMIN current densities of Si and SOI n-channel MOSFETs are largely unchanged over technology nodes and foundries, and constant current-density biasing schemes are proposed to be applied to M OSFET analog/mixed-signal/RF and high-speed digital circuit design.
Journal ArticleDOI
The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks
Timothy O. Dickson,K.H.K. Yau,T. Chalvatzis,A. Mangan,E. Laskin,R. Beerkens,P. Westergaard,M. Tazlauanu,Ming-Ta Yang,Sorin P. Voinigescu +9 more
TL;DR: In this article, it was shown that the current densities of Si and SOI n-channel MOSFETs are largely unchanged over technology nodes and foundries, and that the characteristic current density also remains invariant for the most common circuit topologies such as MOS-SiGe HBT cascodes, MOS CML gates, and nMOS transimpedance amplifiers (TIAs) with active pMOS FET loads.
Journal ArticleDOI
$W$ -Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS
TL;DR: In this article, the authors present low-noise -band amplifiers and milliwatt-level 170-200 GHz output doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology.
Journal ArticleDOI
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
TL;DR: Experimental results for the MMIC at 30 V power supply operation demonstrate greater than 10 dB of small signal gain, 9 W to 15 W saturated output power and 20% to 38% peak power-added efficiency over a 1.5 GHz to 17 GHz bandwidth.