Journal ArticleDOI
Model for modulation doped field effect transistor
TLDR
In this article, a model describing C-V and I-V characteristics of modulation doped FET's is proposed, which takes into account the change in the Fermi energy with the gate voltage.Abstract:
A model describing C-V and I-V characteristics of modulation doped FET's is proposed. The model takes into account the change in the Fermi energy with the gate voltage. At high two dimensional electron concentrations, the equations of the model for the charge control by the gate voltage become similar to the equations of the charge control model where the thickness d of AlGaAs layer should be substituted by d + Δ d and Δ d is the effective width of the potential well (≃ 80 A). Another important prediction of the model is the existence of the "subthreshold" current. A very good quantitative agreement is obtained with our experimental I-V curves using the measured values of the low field mobility and the source resistance.read more
Citations
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Journal ArticleDOI
Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors
TL;DR: In this paper, a model describing I-V and C-V characteristics of modulation doped FET's is developed and used to predict the performance of Al x Ga 1-x As/GaAs FETs in good agreement with experimental results.
Journal ArticleDOI
DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
TL;DR: In this article, a very short-channel HEMT with planar-doped pseudomorphic structure with a high gate aspect-ratio design is presented, and a very high electron velocity in the device channel (3.2*10/sup 7/ cm/s) is demonstrated.
Journal ArticleDOI
Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers
TL;DR: In this article, the authors derived a simple analytical formula for the low field electron mobility which uses the 2D degenerate statistics of the 2d electron gas, taking into account the finite width of the depletion layer in (Al,Ga)As for the scattering by remote donors, scattering by the interface charge, and the polar optical and acoustic deformation potential and piezoelectric scattering.
Journal ArticleDOI
Subbands and charge control in a two-dimensional electron gas field-effect transistor
TL;DR: In this paper, the subband structure and charge distribution in an AlxGa1−xAs/GaAs heterojunction as a function of gate voltage at room temperature has been performed.
Journal ArticleDOI
Quantum effects in Si n-MOS inversion layer at high substrate concentration
TL;DR: In this paper, the charge distribution at the semiconductor-insulator interface is calculated for electrons by solving Schrodinger's and Poisson's equations self-consistently for particles obeying Fermi-Dirac statistics at 300 K.
References
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Journal ArticleDOI
Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
D. Delagebeaudeuf,N.T. Linh +1 more
TL;DR: In this paper, a two-dimensional electron gas FET (TEGFET) constituted by a AlGaAs(n)-GaAs (n-or p-) heterostructure in which the Schottky gate is deposited on the top layer has been developed.
Journal ArticleDOI
Current saturation and small-signal characteristics of GaAs field-effect transistors
P.L. Hower,N.G. Bechtel +1 more
TL;DR: In this paper, the model previously proposed by Turner and Wilson is developed in detail and compared with experiment, and a y-parameter analysis is presented that permits calculation of transconductance and the unity current gain frequency f T.
Journal ArticleDOI
Enhancement-mode high electron mobility transistors for logic applications
TL;DR: In this article, an enhancement mode high electron mobility transistors (E-HEMTs) with selectively doped GaAs/n-AlxGa1-xAs heterojunction structures grown by molecular beam epitaxy are described.
Journal ArticleDOI
A study of high-speed normally off and normally on Al 0.5 Ga 0.5 As heterojunction gate GaAs FET's (HJFET)
TL;DR: In this article, the performance of two types of heterojunction field effect transistors (HJFETs) with sub-micrometer gate lengths are reported. And the gate structure of both types of devices comprises an n-type 1017-cm-3Sn-doped active layer on a Crdoped GaAs substrate, a p-type 1.5 Ga 0.5 As gate layer and a p+-type 5 × 1.7-µm-3Gedoped gate layer on top of the gate.
Journal ArticleDOI
Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors
TL;DR: In this article, the Si-doped AlGaAs top layer without any recess is used for the source, drain, and gate of a two-dimensional electron gas field effect transistors (TEGFET).