Proceedings ArticleDOI
Monolithic expandable 6b 15MHz CMOS/SOS A/D converter
A. Dingwall
- pp 126-127
TLDR
Low power, standard CMOS/SOS LSI technology, applied to a 6b (expandable to 7b) video speed A/D converter design, will be reported.Abstract:
Low power, standard CMOS/SOS LSI technology, applied to a 6b (expandable to 7b) video speed A/D converter design, will be reported. Applications and potential VLSI digital signal processing systems will be reviewed.read more
Citations
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Journal ArticleDOI
Time interleaved converter arrays
W.C. Black,David A. Hodges +1 more
TL;DR: In this article, a number of small but area efficient converters are operated in a time-interleaved fashion to achieve the bandwidth of a flash circuit, but in a substantially smaller area.
Journal ArticleDOI
A CMOS 8-Bit High-Speed A/D Converter IC
TL;DR: In this article, a novel high-speed low-power CMOS balanced comparator circuit is proposed and implemented in an 8M fully parallel analog-to-digital (A/D) converter IC.
Journal ArticleDOI
Monolithic expandable 6 bit 20 MHz CMOS/SOS A/D converter
TL;DR: Standard process CMOS/SOS technology has been applied in the design of a 6 bit parallel 20 MHz A/D converter that may be interconnected in series to obtain 7 bit resolution or in parallel to obtain nearly 40 MHz data rates.
Journal ArticleDOI
Comparator Generation and Selection for Highly Linear CMOS Flash Analog-to-Digital Converter
TL;DR: In this article, a comparator generation and selection method was proposed to reduce the linearity errors of analog-to-digital converter (ADC) based on threshold inverter quantization (TIQ) technique.
Proceedings ArticleDOI
Design method and automation of comparator generation for flash A/D converter
TL;DR: Optimal design method of the TIQ comparator presented in this paper significantly improves the linearity of the A/D converter against the CMOS process variation and the DNL dependence on the CMos process variation can be almost eliminated.
References
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Journal ArticleDOI
16K CMOS/SOS asynchronous static RAM
A.G.F. Dingwall,R.G. Stewart +1 more
TL;DR: A new CMOS/SOS `buried-contact' process allows fabrication of dense static memory cells in a 16K RAM with 1150 /spl mu/m/SUP 2/ (1.78 mil/ SUP 2/) cells based on 5 /splmu/m design rules.
Journal ArticleDOI
40-MHz CMOS-on-sapphire microprocessor
TL;DR: Silicon-on-sapphire (SOS) technology has been applied to the RCA COSMAC microprocessor to obtain a high-speed single-chip CPU.