Journal ArticleDOI
Observation of the first‐order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si
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In this paper, the first order phase transition at the Si surface from single to double atomic steps as a function of temperature T and off-orientation θ of the Si (001) surface along [110] is observed in a metalorganic chemical vapor deposition environment at surprisingly low temperatures.Abstract:
The first‐order phase transition at the Si (001) surface from single to double atomic steps as a function of temperature T and off‐orientation θ of the Si (001) surface along [110] is observed in a metalorganic chemical vapor deposition environment at surprisingly low temperatures. At a given temperature the surface morphology of Si is frozen in by growing InP on top of Si. The existence or the lack of antiphase domains in the InP provides the information about the presence of single or double atomic steps on the Si, respectively, in the moment of growth. Reversability and slight hysteresis of the phase transition are found. The growth parameters for obtaining antiphase domain‐free InP are optimized. Residual stress, epilayer tilt, and defect distribution are discussed. The different peaks in photoluminescence spectra are identified; the assignments are confirmed by using time‐delayed cathodoluminescence (CL) spectra. The lateral variation of quantum efficiency is imaged with scanning CL.read more
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Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
Oliver Supplie,Oleksandr Romanyuk,Christian Koppka,Matthias Steidl,Andreas Nägelein,Agnieszka Paszuk,Lars Winterfeld,Anja Dobrich,Peter Kleinschmidt,Erich Runge,Thomas Hannappel +10 more
TL;DR: In this paper, the authors review the recent progress in metalorganic vapor phase epitaxy (MOVPE) growth of III-V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures.
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GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process
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Atomic surface structure of Si(1 0 0) substrates prepared in a chemical vapor environment
TL;DR: In this article, the atomic structure of Si(1.0.0) surfaces was investigated by low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) available through a dedicated, contamination-free sample transfer to ultra high vacuum (UHV).
Journal ArticleDOI
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
Yong Du,Buqing Xu,Gui Quan Wang,Yuanhao Miao,Ben Li,Zhenzhen Kong,Yan Dong,Wenwu Tang,Henry H. Radamson +8 more
TL;DR: In this article , the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-v hetero-epitaxial growth on Si substrates.
Journal ArticleDOI
Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)
C. S. C. Barrett,Thomas P. Martin,Xinyu Bao,E. L. Kennon,L. Gutierrez,Patrick M. Martin,Errol Antonio C. Sanchez,Kevin S. Jones +7 more
TL;DR: In this paper, the authors investigate the effect of growth temperature on the propagation and annihilation of APBs in GaAs films grown on Si(001) by metal-organic chemical vapor deposition (MOCVD).