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On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory
V. I. Talanin,Igor E. Talanin +1 more
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In this article, the adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered.Abstract:
The adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered. It has been shown that the introduction and consideration of thermal conditions of crystal growth in the initial equations of the classical nucleation theory make it possible to explain the precipitation processes occurring in the high-temperature range and thus extend the theoretical basis of the application of the classical nucleation theory. According to the model of high-temperature precipitation, the smallest critical radius of oxygen and carbon precipitates is observed in the vicinity of the crystallization front. Cooling of the crystal is accompanied by the growth and coalescence of precipitates. During heat treatments, the nucleation of precipitates starts at low temperatures, whereas the growth and coalescence of precipitates occur with an increase in the temperature. It has been assumed that the high-temperature precipitation of impurities can determine the overall kinetics of defect formation in other dislocation-free single crystals of semiconductors and metals.read more
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Fabrication and characterization of nickel thin film as resistance temperature detector
TL;DR: In this article, the fabrication of Ni RTDs at low temperatures is investigated by direct-current (DC) magnetron sputtering, and the effects of sputter pressure and power on thin film microscopic morphology and structure are also investigated.
Journal ArticleDOI
Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review)
V. I. Talanin,I. E. Talanin +1 more
TL;DR: In this paper, a comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out.
Journal ArticleDOI
Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state
V. I. Talanin,I. E. Talanin +1 more
TL;DR: In this paper, the formation of silicon carbon and siliconoxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation.
A Selective Review of the Quantification of Defect Dynamics in Growing Czochralski Silicon Crystals
TL;DR: In this paper, the authors present a detailed review of the defect dynamics in the Czochralski process and the float-zone process in growing CZ and FZ crystals.
References
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Journal ArticleDOI
On the recombination of intrinsic point defects in dislocation-free silicon single crystals
V. I. Talanin,I. E. Talanin +1 more
TL;DR: In this paper, the authors investigated the recombination of intrinsic point defects in dislocation-free silicon single crystals and established experimentally and confirmed by thermodynamic calculations that this process in the vicinity of the crystallization front is hindered by the recombinations barrier.
Journal ArticleDOI
Electron-Microscopic Study of Microdefects in Silicon Single Crystals Grown at High Speed
TL;DR: Using selective etching technique and transmission electron microscopy C-and D-types micro-pefects in silicon single crystals grown in the direction by zone floating technique in vacuum at growth rates ≈ 6 mm/min are investigated in this article.
Journal ArticleDOI
Kinetics of high-temperature precipitation in dislocation-free silicon single crystals
V. I. Talanin,I. E. Talanin +1 more
TL;DR: In this paper, the defect structure of dislocation-free silicon single crystals has been calculated using the approximate solution of the Fokker-Planck partial differential equations, and it has been demonstrated that the precipitation starts to occur near the crystallization front due to the disappearance of excess intrinsic point defects on sinks whose role is played by oxygen and carbon impurities.
Journal ArticleDOI
Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals
V. I. Talanin,I. E. Talanin +1 more
TL;DR: In this article, the formation of vacancy microvoids and A-microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures.
Journal ArticleDOI
Physical nature of grown-in microdefects in Czochralski-grown silicon and their transformation during various technological effects
V. I. Talanin,I. E. Talanin +1 more
TL;DR: In this paper, the physical nature of grown-in microdefects inside and within the OSF ring was determined, and it was shown that background oxygen and carbon impurities mostly affect the formation mechanism of grown in micro defects.
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