Journal ArticleDOI
One-dimensional transport and the quantisation of the ballistic resistance
D. A. Wharam,Trevor Thornton,R. Newbury,Michael Pepper,Haroon Ahmed,J. E. F. Frost,David G. Hasko,D. C. Peacock,David A. Ritchie,G. A. C. Jones +9 more
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In this article, the authors present experimental results and a supporting theory, showing that a one-dimensional system in which transport is ballistic possesses a quantised resistance, h/2ie2, where i is the number of occupied 1D sub-bands and the spin degeneracy is two.Abstract:
The authors present experimental results, and a supporting theory, showing that a one-dimensional system in which transport is ballistic possesses a quantised resistance, h/2ie2, where i is the number of occupied 1D sub-bands and the spin degeneracy is two. A short narrow channel is defined in the 2DEG of a GaAs-AlGaAs heterojunction and as the width of the system is changed, the sub-bands pass through the Fermi energy and the resistance jumps between quantised values. The value of the quantised resistance is derived and the accuracy of the quantisation is discussed. The effect can be strong at temperatures approximately 0.1 K, with up to 17 sub-bands being observed. The action of a transverse magnetic field is to depopulate the sub-bands and form hybrid levels; a parallel field lifts the spin degeneracy and brings about a further quantisation of resistance at values h/2(i+1/2)e2.read more
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Shot noise in mesoscopic conductors
TL;DR: Theoretical and experimental work concerned with dynamic fluctuations has developed into a very active and fascinating subfield of mesoscopic physics as discussed by the authors, which can be used to obtain information on a system which is not available through conductance measurements.
Journal ArticleDOI
Kondo effect in a single-electron transistor
David Goldhaber-Gordon,David Goldhaber-Gordon,Hadas Shtrikman,Diana Mahalu,David Abusch-Magder,U. Meirav,Marc Kastner +6 more
TL;DR: In this paper, the binding energy of the spin singlet has been observed in a single-electron transistor (SET) with only two electrodes and without control over the structure.
Journal ArticleDOI
Kondo Physics in a Single Electron Transistor
David Goldhaber-Gordon,Hadas Shtrikman,Diana Mahalu,David Abusch-Magder,U. Meirav,Marc Kastner +5 more
TL;DR: Meir et al. as mentioned in this paper reported measurements on a new generation of SETs that display all the aspects of the Kondo phenomenon: the spin singlet forms and causes an enhancement of the zero-bias conductance when the number of electrons on the artificial atom is odd but not when it is even.
Journal ArticleDOI
Quantum properties of atomic-sized conductors
TL;DR: In this article, the authors discuss the results in the context of related developments, including Andreev reflection, shot noise, conductance quantization and dynamical Coulomb blockade.
Transport in Nanostructures
TL;DR: In this article, the authors introduce the concept of quantum confined systems and single electron phenomena in nanodevices, as well as interference in diffusive transport and temperature decay of fluctuations.
References
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Journal ArticleDOI
One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction
TL;DR: In this paper, the transport properties of the 2D electron gas in a narrow channel formed by the split gate of a GaAs-AlGaAs heterojunction field effect transistor were investigated.
Journal ArticleDOI
Magnetic depopulation of 1D subbands in a narrow 2D electron gas in a GaAs:AlGaAs heterojunction.
TL;DR: In this paper, the transverse magnetoconductance in the range 0.3 to 8 T of a narrow, variable-width channel in a GaAs:AlGaAs heterojunction was investigated.
Journal ArticleDOI
Cohesive properties of CaF2 and UO2 in the atomic sphere approximation
Paul J. Kelly,M.S.S. Brooks +1 more
TL;DR: In this paper, the zero-temperature equations of state of UO2 and CaF2 have been computed from semi-relativistic LMTO calculations, and the calculated lattice parameters are 1/2% above and 5% below the experimentally determined equilibria for UO 2 and Ca F2 respectively.
Journal ArticleDOI
Direct measurement of electron-phonon coupling α 2 F(ω) using point contacts: Noble metals
TL;DR: In this article, a new technique of forming tiny point contacts between normal metals is described, based on measuring the voltage derivative of the resistance of such contacts at 1.2 K, structure is found which is consistent with bulk-phonon densities of states.
Journal ArticleDOI
Magnetic depopulation of electronic subbands in low-dimensional semiconductor systems and their influence on the electrical resistivity and Hall effect
Karl-Fredrik Berggren,D J Newson +1 more
TL;DR: In this article, the authors investigated the effect of depopulation on the Hall effect on the quantum Hall effect as 1D subbands are depopulated by a suitably orientated magnetic field.