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Journal ArticleDOI

Organic Field‐Effect Transistors

Gilles Horowitz
- 01 Mar 1998 - 
- Vol. 10, Iss: 5, pp 365-377
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TLDR
In this paper, the performance of organic field effect transistors (OFETs) is examined in terms of field effect mobility and on-off current ratio, and the most prominent fabrication techniques are described.
Abstract
Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and on–off current ratio. We compare the various compounds that have been used as the active component, and describe the most prominent fabrication techniques. Finally, we analyze the charge transport mechanisms in organic solids, and the resulting models of OFETs.

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Citations
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Journal ArticleDOI

Ultrahigh Gain, Low Noise, Ultraviolet Photodetectors with Highly Aligned Organic Crystals

TL;DR: In this article, the authors reported highly sensitive phototransistors with the highly aligned C8-BTBT polycrystalline fi lms as the active layers, which had an edge-on alignment on the substrate and form monoclinic crystal structure.
Journal ArticleDOI

Theoretical study of long oligothiophene dications: bipolaron vs polaron pair vs triplet state.

TL;DR: Results from isodesmic reactions show that the stability of oligothiophene cation radicals over dications is inversely proportional to chain length, and the relative stability of the bipolaron versus the polaron pair were supported by CASSCF calculations.
Journal ArticleDOI

Self-assembly of supramolecular fullerene ribbons via hydrogen-bonding interactions and their impact on fullerene electronic interactions and charge carrier mobility.

TL;DR: The anisotropy of the electronic interactions between fullerenes in crystalline solids was examined using a confocal fluorescence microscope by probing the polarization of the fluorescence emission arising from fullerene excimer-like emitting states.
Journal ArticleDOI

Correlation of on-state conductance with referenced electrochemical potential in ion gel gated polymer transistors

TL;DR: In this paper, the electrochemical potential at organic semiconductor/gate dielectric interfaces in printed polymer transistors employing a gel electrolyte as the gate insulator was measured simultaneously with the transistor transfer characteristics.
Journal ArticleDOI

Photoinduced transient stark spectroscopy in organic semiconductors: a method for charge mobility determination in the picosecond regime

TL;DR: Subpicosecond photoinduced Stark spectroscopy experiments are carried out for measuring charge carrier mobility in organic semiconductors and two distinct transport regimes are revealed: a short-lived state of high mobility and a transient towards the trap limited transport, associated with the mesoscopic structure of the medium.
References
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Book

Physics of Semiconductor Devices

Michael Shur
TL;DR: In this article, the authors present a review of the properties of Semiconductors and their properties in terms of physics and properties of devices, including the following: 1.1 Introduction. 1.2 Crystal Structure.
Journal ArticleDOI

Conjugated polymer surfaces and interfaces

TL;DR: In this article, the early stages of interface formation with metals on the surfaces of conjugated polymers and model molecular solids, as studied using photoelectron spectroscopy, are discussed.
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