Proceedings ArticleDOI
Organic Vapor Sensitivity In A Porous Silicon Device
K. Watanabe,T. Okada,I. Choe,Y. Satoh +3 more
- Vol. 1, pp 890-893
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TLDR
In this article, an organic vapor sensitive device using anodized porous silicon has been developed, which consists of two pn junctions surrounded with the porous silicon layer as a vapor sensing element.Abstract:
Organic vapor sensitive device using anodized porous silicon has been developed. The device consists of two pn junctions surrounded with the porous silicon layer as a vapor sensing element. The devices show an increase of current for exposure to thousands ppm of organic vapor at room temperature. A high sensitivity is observed for ethanol vapor. It is discussed that the adsorption of polar molecules induces a "soft" breakdown in the reverse biased pn junction.read more
Citations
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Journal ArticleDOI
Chemical reduction of three-dimensional silica micro-assemblies into microporous silicon replicas
Zhihao Bao,Michael R. Weatherspoon,Samuel Shian,Ye Cai,Phillip D. Graham,Shawn M. Allan,Gul Ahmad,Matthew B. Dickerson,Benjamin C. Church,Zhitao Kang,Harry Abernathy,Christopher J. Summers,Meilin Liu,Kenneth H. Sandhage +13 more
TL;DR: A low-temperature (650 °C) magnesiothermic reduction process for converting three-dimensional nanostructured silica micro-assemblies into microporous nanocrystalline silicon replicas that retained the starting three- dimensional frustule morphology is demonstrated.
Journal ArticleDOI
A novel surface-micromachined capacitive porous silicon humidity sensor
TL;DR: In this article, the design, fabrication and characterisation of a novel humidity sensor is presented, which consists of a capacitor with a porous silicon dielectric, two thermoresistors and a refresh resistor.
Journal ArticleDOI
CNT Sensors for Detecting Gases with Low Adsorption Energy by Ionization.
TL;DR: In this paper, a gas sensor using carbon nanotube(CNT) array as electron emitters for the purpose of detecting these gases was reported, based on an electrical discharge theory known as Paschen's law, worked by figuring the changes of dark discharge current and initial breakdown voltage depending on the concentration and identity of gases.
Journal ArticleDOI
A silicon crystalline resistor with an adsorbing porous layer as gas sensor
TL;DR: A new integrated sensing device, that is a crystalline silicon resistor provided with an adsorbing porous silicon layer on its top, is proposed, based on a gas-induced modulation effect of the resistor cross-section due to the adsorbed molecules in the porous film.
Journal ArticleDOI
Temperature behavior of the APSFET— a porous silicon-based FET gas sensor
TL;DR: In this paper, the temperature behavior of the adsorption porous silicon FET (APSFET) in the presence of different isopropanol vapors concentrations is investigated.
References
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Journal ArticleDOI
Adsorbate effects on photoluminescence and electrical conductivity of porous silicon
TL;DR: In this paper, the quenching of photoluminescence by the adsorbates has been quantified and correlation to the electrical conductivity of the porous silicon sample has been studied.
Journal ArticleDOI
Investigations of porous silicon for vapor sensing
TL;DR: In this article, a 440% increase in capacitance in response to a humidity change from 0 to 100% was measured in a Schottky-barrier r.h. sensor made using an alumin.