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Open AccessJournal ArticleDOI

Oxidation Mechanism of Copper at 623-1073 K

Yongfu Zhu, +2 more
- 01 Sep 2002 - 
- Vol. 43, Iss: 9, pp 2173-2176
TLDR
In this paper, the authors studied copper oxidation at 623-1073 K under 0.1 MPa O 2 using a commercial 99.9999% pure copper and found that the growth of Cu 2 O is predominant and it obeys the parabolic law at 6 23-773 K.
Abstract
In reviewing the results reported for copper oxidation at intermediate temperatures from 573 to 1173 K, the oxidation mechanism at the lower part of this temperature range and the reason for the change in activation energy with decreasing the temperature remain unclear. To make it clear, copper oxidation is studied at 623-1073 K under 0. 1 MPa O 2 using a commercial 99.9999% pure copper. The oxidation kinetics is essentially parabolic, and the activation energy decreases from 111 kJ/mol at 873-1073 K to 40kJ/mol at 623-773 K. The growth of Cu 2 O is predominant and it obeys the parabolic law at 623-773 K, as well as the case at 873-1073 K. In addition to grain boundary diffusion of copper along the fine and thin columnar Cu 2 O grains, the non-protective CuO whisker layer, which cannot keep the oxygen potential constant at the Cu 2 O/CuD interface, should be responsible for the decrease in the activation energy at 623-773 K.

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Citations
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Journal ArticleDOI

The Oxidation of Metals

A. G. Quarrell
- 01 May 1954 - 
TL;DR: Kubaschewski and Hopkins as mentioned in this paper described the process of metal and alloys oxidation and showed that the process can be traced back to the work of O. O'Brien and B. E. Hopkins.
Journal ArticleDOI

Enhanced room-temperature corrosion of copper in the presence of graphene.

TL;DR: It is shown that a graphene coating can, on the contrary, accelerate long-term oxidation of an underlying copper substrate in ambient atmosphere at room temperature.
Journal ArticleDOI

Driving force and growth mechanism for spontaneous oxide nanowire formation during the thermal oxidation of metals

TL;DR: In this article, the volume change associated with the solid-state transformation at the CuO/Cu 2 O interface produces compressive stresses, which stimulate CuO nanowire growth to accompany the interface reaction.
Journal ArticleDOI

Investigating the Origin of Enhanced C2+ Selectivity in Oxide-/Hydroxide-derived Copper Electrodes during CO2 Electroreduction

TL;DR: This work finds that at the steady stage of CO2RR, the electrodes have all been reduced to Cu0, regardless of the initial states, suggesting that the high C2+ selectivities are not associated with specific oxidation states of Cu.
Journal ArticleDOI

Brief Review of Oxidation Kinetics of Copper at 350 °C to 1050 °C

TL;DR: In this paper, the authors elucidated copper's oxication mechanism and purity effects by oxidizing 99.99 pct (4N), 99.9999 pct(6N), and floating zone refined (>99.999 pct) specimens in 0.1 MPa oxygen at 350 °C to 1050 °C. Throughout the temperature range, the oxidation kinetics for all specimens obeys the parabolic oxidation rate law.
References
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Journal ArticleDOI

The Oxidation of Metals

A. G. Quarrell
- 01 May 1954 - 
TL;DR: Kubaschewski and Hopkins as mentioned in this paper described the process of metal and alloys oxidation and showed that the process can be traced back to the work of O. O'Brien and B. E. Hopkins.
Journal ArticleDOI

Growth and Structure of Nickel Oxide on Nickel Crystal Faces

TL;DR: In this article, the structure of films of 300A•15μ thick formed on (100), (110), and (111)Ni crystal faces at temperatures in the range 500°-800°C were investigated by electron microscopy and x-ray diffraction.
Journal ArticleDOI

Oxidation of Copper and Electronic Transport in Copper Oxides

TL;DR: In this article, a thermally grown large-grain polycrystals of nonstoichiometric copper oxides were studied at elevated temperatures, where electrical conductivity measurements as a function of temperature (350 −1134°C) and oxygen partial pressure (10−8 −1.0 atm) indicate intrinsic electronic conduction in CuO over the entire range of conditions.
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